skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ferroelectric switching in epitaxial GeTe films

Abstract

In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.

Authors:
;  [1]; ; ;  [2]
  1. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 Japan (Japan)
  2. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
Publication Date:
OSTI Identifier:
22304199
Resource Type:
Journal Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 2; Journal Issue: 6; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2166-532X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPUTERIZED SIMULATION; DENSITY FUNCTIONAL METHOD; EPITAXY; FERROELECTRIC MATERIALS; GERMANIUM TELLURIDES; MICROSCOPY; POLARIZATION; SUBSTRATES; THIN FILMS

Citation Formats

Kolobov, A. V., E-mail: a.kolobov@aist.go.jp, Fons, P., Tominaga, J., Kim, D. J., Gruverman, A., E-mail: agruverman2@unl.edu, Giussani, A., and Calarco, R. Ferroelectric switching in epitaxial GeTe films. United States: N. p., 2014. Web. doi:10.1063/1.4881735.
Kolobov, A. V., E-mail: a.kolobov@aist.go.jp, Fons, P., Tominaga, J., Kim, D. J., Gruverman, A., E-mail: agruverman2@unl.edu, Giussani, A., & Calarco, R. Ferroelectric switching in epitaxial GeTe films. United States. https://doi.org/10.1063/1.4881735
Kolobov, A. V., E-mail: a.kolobov@aist.go.jp, Fons, P., Tominaga, J., Kim, D. J., Gruverman, A., E-mail: agruverman2@unl.edu, Giussani, A., and Calarco, R. 2014. "Ferroelectric switching in epitaxial GeTe films". United States. https://doi.org/10.1063/1.4881735.
@article{osti_22304199,
title = {Ferroelectric switching in epitaxial GeTe films},
author = {Kolobov, A. V., E-mail: a.kolobov@aist.go.jp and Fons, P. and Tominaga, J. and Kim, D. J. and Gruverman, A., E-mail: agruverman2@unl.edu and Giussani, A. and Calarco, R.},
abstractNote = {In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.},
doi = {10.1063/1.4881735},
url = {https://www.osti.gov/biblio/22304199}, journal = {APL Materials},
issn = {2166-532X},
number = 6,
volume = 2,
place = {United States},
year = {Sun Jun 01 00:00:00 EDT 2014},
month = {Sun Jun 01 00:00:00 EDT 2014}
}