Electrical and optical characterization of Au/CaF{sub 2}/p-Si(111) tunnel-injection diodes

Journal Article · Sat Jun 14 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4882375· OSTI ID:22304172

Vexler, M. I.; Fedorov, V. V.; Suturin, S. M.; Sokolov, N. S. ^[1]

---

1. Ioffe Physical-Technical Institute, 26 Polytechnicheskaya Str., 194021 St.-Petersburg (Russian Federation)

Metal/CaF{sub 2}/p-Si(111) capacitors with the improved-quality several-nanometer-thick epitaxial fluorite films are examined, aiming at solidifying a candidacy of this material for barrier layers in silicon devices. Structural and transport properties of a thin crystalline dielectric are characterized by different experimental techniques. The measured current-voltage characteristics accompanied with simulation results demonstrate that the elastic tunneling electron injection takes place in the considered structures. The same result follows from the behavior of hot-electron-injection-related electroluminescence within the selected spectral intervals. The result is important considering a perspective of using the epitaxial fluorides as barrier layers in resonant tunneling diodes.

• OSTI ID: 22304172
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CALCIUM FLUORIDES
CAPACITORS
DEPLETION LAYER
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTROLUMINESCENCE
ELECTRON BEAM INJECTION
EPITAXY
FILMS
GOLD
HETEROJUNCTIONS
INJECTION
OPTICAL PROPERTIES
P-TYPE CONDUCTORS
SILICON
SIMULATION
TUNNEL DIODES
TUNNEL EFFECT