Ultrafast terahertz-induced response of GeSbTe phase-change materials
- Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
- Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
- SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)
- I. Physikalisches Institut, RWTH Aachen University, 52056 Aachen (Germany)
The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap transmission as a probe of the electronic and structural response below the switching threshold, we observe a field-induced heating of the carrier system and resolve the picosecond-time-scale energy relaxation processes and their dependence on the sample annealing condition in the crystalline phase. In the amorphous phase, an instantaneous electroabsorption response is observed, quadratic in the terahertz field, followed by field-driven lattice heating, with Ohmic behavior up to 200 kV/cm.
- OSTI ID:
- 22303847
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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