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Title: Resonant scattering of surface plasmon polaritons by dressed quantum dots

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4883859· OSTI ID:22303834
;  [1];  [2];  [3];  [4];  [5];  [6]
  1. Air Force Research Laboratory, Space Vehicles Directorate, Kirtland Air Force Base, New Mexico 87117 (United States)
  2. Department of Mechanical Engineering, Stevens Institute of Technology, 1 Castle Point Terrace, Hoboken, New Jersey 07030 (United States)
  3. Department of Physics and Astronomy, Hunter College of the City University of New York, 695 Park Avenue, New York, New York 10065 (United States)
  4. Department of Physics and Astronomy, University of California, Irvine, California 92697 (United States)
  5. Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States)
  6. Department of Mechanical Engineering, 3112 Etcheverry Hall, University of California at Berkeley, Berkeley, California 94720 (United States)

The resonant scattering of surface plasmon-polariton waves (SPP) by embedded semiconductor quantum dots above the dielectric/metal interface is explored in the strong-coupling regime. In contrast to non-resonant scattering by a localized dielectric surface defect, a strong resonant peak in the spectrum of the scattered field is predicted that is accompanied by two side valleys. The peak height depends nonlinearly on the amplitude of SPP waves, reflecting the feedback dynamics from a photon-dressed electron-hole plasma inside the quantum dots. This unique behavior in the scattered field peak strength is correlated with the occurrence of a resonant dip in the absorption spectrum of SPP waves due to the interband photon-dressing effect. Our result on the scattering of SPP waves may be experimentally observable and applied to spatially selective illumination and imaging of individual molecules.

OSTI ID:
22303834
Journal Information:
Applied Physics Letters, Vol. 104, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English