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Title: Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy

Abstract

We assess scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) for thickness measurements on few-layer hexagonal boron nitride (h-BN), the layered dielectric of choice for integration with graphene and other two-dimensional materials. Observations on h-BN islands with large, atomically flat terraces show that the secondary electron intensity in SEM reflects monolayer height changes in films up to least 10 atomic layers thickness. From a quantitative analysis of AES data, the energy-dependent electron escape depth in h-BN films is deduced. The results show that AES is suitable for absolute thickness measurements of few-layer h-BN of 1 to 6 layers.

Authors:
;  [1]
  1. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)
Publication Date:
OSTI Identifier:
22303739
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 2; Journal Issue: 9; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; AUGER ELECTRON SPECTROSCOPY; BORON NITRIDES; DIELECTRIC MATERIALS; FILMS; GRAPHENE; SCANNING ELECTRON MICROSCOPY; THICKNESS

Citation Formats

Sutter, P., E-mail: psutter@bnl.gov, and Sutter, E.. Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy. United States: N. p., 2014. Web. doi:10.1063/1.4889815.
Sutter, P., E-mail: psutter@bnl.gov, & Sutter, E.. Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy. United States. doi:10.1063/1.4889815.
Sutter, P., E-mail: psutter@bnl.gov, and Sutter, E.. Mon . "Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy". United States. doi:10.1063/1.4889815.
@article{osti_22303739,
title = {Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy},
author = {Sutter, P., E-mail: psutter@bnl.gov and Sutter, E.},
abstractNote = {We assess scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) for thickness measurements on few-layer hexagonal boron nitride (h-BN), the layered dielectric of choice for integration with graphene and other two-dimensional materials. Observations on h-BN islands with large, atomically flat terraces show that the secondary electron intensity in SEM reflects monolayer height changes in films up to least 10 atomic layers thickness. From a quantitative analysis of AES data, the energy-dependent electron escape depth in h-BN films is deduced. The results show that AES is suitable for absolute thickness measurements of few-layer h-BN of 1 to 6 layers.},
doi = {10.1063/1.4889815},
journal = {APL Materials},
number = 9,
volume = 2,
place = {United States},
year = {Mon Sep 01 00:00:00 EDT 2014},
month = {Mon Sep 01 00:00:00 EDT 2014}
}