Hole-transport material variation in fully vacuum deposited perovskite solar cells
- Institut für Angewandte Photophysik, Technische Universität Dresden, 01069 Dresden (Germany)
This work addresses the effect of energy level alignment between the hole-transporting material and the active layer in vacuum deposited, planar-heterojunction CH{sub 3}NH{sub 3}PbI{sub x−3}Cl{sub x} perovskite solar cells. Through a series of hole-transport materials, with conductivity values set using controlled p-doping of the layer, we correlate their ionization potentials with the open-circuit voltage of the device. With ionization potentials beyond 5.3 eV, a substantial decrease in both current density and voltage is observed, which highlights the delicate energetic balance between driving force for hole-extraction and maximizing the photovoltage. In contrast, when an optimal ionization potential match is found, the open-circuit voltage can be maximized, leading to power conversion efficiencies of up to 10.9%. These values are obtained with hole-transport materials that differ from the commonly used Spiro-MeO-TAD and correspond to a 40% performance increase versus this reference.
- OSTI ID:
- 22303733
- Journal Information:
- APL Materials, Vol. 2, Issue 8; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
- Country of Publication:
- United States
- Language:
- English
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