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Title: Advanced Si solid phase crystallization for vertical channel in vertical NANDs

Abstract

The advanced solid phase crystallization (SPC) method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND) devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce surface nucleation and equiaxial microstructure. Subsequently, this SiGe thin film microstructure is propagated to the underlying Si thin film by epitaxy-like growth. The initial nucleation at the SiGe surface was clearly observed by in situ transmission electron microscopy (TEM) when heating up to 600 °C. The equiaxial microstructures of both SiGe nucleation and Si channel layers were shown in the crystallized bi-layer plan-view TEM measurements. Based on these experimental results, the large-grained and less-defective Si microstructure is expected to form near the channel region of each VNAND cell transistor, which may improve the electrical characteristics.

Authors:
 [1];  [1];  [2]; ;  [3];  [1];  [2]
  1. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of)
  2. (Korea, Republic of)
  3. Semiconductor R and D Center, Samsung Electronics Co., Ltd., Hwasung 445-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22303730
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 2; Journal Issue: 7; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALLIZATION; EPITAXY; GERMANIUM SILICIDES; HEATING; LAYERS; MICROSTRUCTURE; NUCLEATION; SOLIDS; SURFACES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Lee, Sangsoo, Son, Yong-Hoon, Semiconductor R and D Center, Samsung Electronics Co., Ltd., Hwasung 445-701, Hwang, Kihyun, Shin, Yoo Gyun, Yoon, Euijoon, E-mail: eyoon@snu.ac.kr, and Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270. Advanced Si solid phase crystallization for vertical channel in vertical NANDs. United States: N. p., 2014. Web. doi:10.1063/1.4887418.
Lee, Sangsoo, Son, Yong-Hoon, Semiconductor R and D Center, Samsung Electronics Co., Ltd., Hwasung 445-701, Hwang, Kihyun, Shin, Yoo Gyun, Yoon, Euijoon, E-mail: eyoon@snu.ac.kr, & Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270. Advanced Si solid phase crystallization for vertical channel in vertical NANDs. United States. doi:10.1063/1.4887418.
Lee, Sangsoo, Son, Yong-Hoon, Semiconductor R and D Center, Samsung Electronics Co., Ltd., Hwasung 445-701, Hwang, Kihyun, Shin, Yoo Gyun, Yoon, Euijoon, E-mail: eyoon@snu.ac.kr, and Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270. 2014. "Advanced Si solid phase crystallization for vertical channel in vertical NANDs". United States. doi:10.1063/1.4887418.
@article{osti_22303730,
title = {Advanced Si solid phase crystallization for vertical channel in vertical NANDs},
author = {Lee, Sangsoo and Son, Yong-Hoon and Semiconductor R and D Center, Samsung Electronics Co., Ltd., Hwasung 445-701 and Hwang, Kihyun and Shin, Yoo Gyun and Yoon, Euijoon, E-mail: eyoon@snu.ac.kr and Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270},
abstractNote = {The advanced solid phase crystallization (SPC) method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND) devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce surface nucleation and equiaxial microstructure. Subsequently, this SiGe thin film microstructure is propagated to the underlying Si thin film by epitaxy-like growth. The initial nucleation at the SiGe surface was clearly observed by in situ transmission electron microscopy (TEM) when heating up to 600 °C. The equiaxial microstructures of both SiGe nucleation and Si channel layers were shown in the crystallized bi-layer plan-view TEM measurements. Based on these experimental results, the large-grained and less-defective Si microstructure is expected to form near the channel region of each VNAND cell transistor, which may improve the electrical characteristics.},
doi = {10.1063/1.4887418},
journal = {APL Materials},
number = 7,
volume = 2,
place = {United States},
year = 2014,
month = 7
}