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Title: Wet chemical thinning of molybdenum disulfide down to its monolayer

Abstract

We report on the preparation of mono- and bi-layer molybdenum disulfide (MoS{sub 2}) from a bulk crystal by facile wet chemical etching. We show that concentrated nitric acid (HNO{sub 3}) effectively etches thin MoS{sub 2} crystals from their edges via formation of MoO{sub 3}. Interestingly, etching of thin crystals on a substrate leaves behind unreacted mono- and bilayer sheets. The flakes obtained by chemical etching exhibit electronic quality comparable to that of mechanically exfoliated counterparts. Our findings indicate that the self-limiting chemical etching is a promising top-down route to preparing atomically thin crystals from bulk layer compounds.

Authors:
 [1]; ;  [2];  [3];  [2];  [1];  [3];  [3]
  1. Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 (Singapore)
  2. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551 (Singapore)
  3. (Singapore)
Publication Date:
OSTI Identifier:
22303563
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 2; Journal Issue: 9; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALS; ETCHING; LAYERS; MOLYBDENUM OXIDES; MOLYBDENUM SULFIDES; NITRIC ACID; SUBSTRATES

Citation Formats

Amara, Kiran Kumar, Chu, Leiqiang, Kumar, Rajeev, Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542, Toh, Minglin, Eda, Goki, E-mail: g.eda@nus.edu.sg, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, and Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542. Wet chemical thinning of molybdenum disulfide down to its monolayer. United States: N. p., 2014. Web. doi:10.1063/1.4893962.
Amara, Kiran Kumar, Chu, Leiqiang, Kumar, Rajeev, Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542, Toh, Minglin, Eda, Goki, E-mail: g.eda@nus.edu.sg, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, & Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542. Wet chemical thinning of molybdenum disulfide down to its monolayer. United States. doi:10.1063/1.4893962.
Amara, Kiran Kumar, Chu, Leiqiang, Kumar, Rajeev, Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542, Toh, Minglin, Eda, Goki, E-mail: g.eda@nus.edu.sg, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, and Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542. Mon . "Wet chemical thinning of molybdenum disulfide down to its monolayer". United States. doi:10.1063/1.4893962.
@article{osti_22303563,
title = {Wet chemical thinning of molybdenum disulfide down to its monolayer},
author = {Amara, Kiran Kumar and Chu, Leiqiang and Kumar, Rajeev and Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542 and Toh, Minglin and Eda, Goki, E-mail: g.eda@nus.edu.sg and Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551 and Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542},
abstractNote = {We report on the preparation of mono- and bi-layer molybdenum disulfide (MoS{sub 2}) from a bulk crystal by facile wet chemical etching. We show that concentrated nitric acid (HNO{sub 3}) effectively etches thin MoS{sub 2} crystals from their edges via formation of MoO{sub 3}. Interestingly, etching of thin crystals on a substrate leaves behind unreacted mono- and bilayer sheets. The flakes obtained by chemical etching exhibit electronic quality comparable to that of mechanically exfoliated counterparts. Our findings indicate that the self-limiting chemical etching is a promising top-down route to preparing atomically thin crystals from bulk layer compounds.},
doi = {10.1063/1.4893962},
journal = {APL Materials},
number = 9,
volume = 2,
place = {United States},
year = {Mon Sep 01 00:00:00 EDT 2014},
month = {Mon Sep 01 00:00:00 EDT 2014}
}