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Title: Metal–semiconductor transition in atomically thin Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8} nanosheets

Abstract

Two-dimensional layered materials have attracted considerable attention since the discovery of graphene. Here we demonstrate that the layered Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8} (BSCO) can be mechanically exfoliated into single- or few-layer nanosheets. The BSCO nanosheets with four or more layers display bulk metallic characteristics, while the nanosheets with three or fewer layers have a layer-number-dependent semiconducting characteristics. Charge transport in bilayer or trilayer BSCO nanosheets exhibits Mott 2D variable-range-hopping (VRH) conduction throughout 2 K–300 K, while the charge transport in monolayers follows the Mott-VRH law above a crossover temperature of 75 K, and is governed by Efros and Shklovskii-VRH laws below 75 K. Disorder potentials and Coulomb charging both contribute to the transport gap of these nanodevices. Our study reveals a distinct layer number-dependent metal-to-semiconductor transition in a new class of 2D materials, and is of great significance for both fundamental investigations and practical devices.

Authors:
; ; ;  [1]; ;  [2];  [3];  [1];  [4];  [2];  [4]
  1. Department of Materials Science and Engineering, University of California, Los Angeles, California 90095 (United States)
  2. Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095 (United States)
  3. Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)
  4. (United States)
Publication Date:
OSTI Identifier:
22303561
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 2; Journal Issue: 9; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GRAPHENE; LAYERS; METALS; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS

Citation Formats

Wang, Yang, Cheng, Rui, Dong, Jianjin, Liu, Yuan, Zhou, Hailong, Yu, Woo Jong, Terasaki, Ichiro, Huang, Yu, E-mail: yhuang@seas.ucla.edu, California Nanosystems Institute, University of California, Los Angeles, California 90095, Duan, Xiangfeng, E-mail: xduan@chem.ucla.edu, and California Nanosystems Institute, University of California, Los Angeles, California 90095. Metal–semiconductor transition in atomically thin Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8} nanosheets. United States: N. p., 2014. Web. doi:10.1063/1.4892975.
Wang, Yang, Cheng, Rui, Dong, Jianjin, Liu, Yuan, Zhou, Hailong, Yu, Woo Jong, Terasaki, Ichiro, Huang, Yu, E-mail: yhuang@seas.ucla.edu, California Nanosystems Institute, University of California, Los Angeles, California 90095, Duan, Xiangfeng, E-mail: xduan@chem.ucla.edu, & California Nanosystems Institute, University of California, Los Angeles, California 90095. Metal–semiconductor transition in atomically thin Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8} nanosheets. United States. doi:10.1063/1.4892975.
Wang, Yang, Cheng, Rui, Dong, Jianjin, Liu, Yuan, Zhou, Hailong, Yu, Woo Jong, Terasaki, Ichiro, Huang, Yu, E-mail: yhuang@seas.ucla.edu, California Nanosystems Institute, University of California, Los Angeles, California 90095, Duan, Xiangfeng, E-mail: xduan@chem.ucla.edu, and California Nanosystems Institute, University of California, Los Angeles, California 90095. Mon . "Metal–semiconductor transition in atomically thin Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8} nanosheets". United States. doi:10.1063/1.4892975.
@article{osti_22303561,
title = {Metal–semiconductor transition in atomically thin Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8} nanosheets},
author = {Wang, Yang and Cheng, Rui and Dong, Jianjin and Liu, Yuan and Zhou, Hailong and Yu, Woo Jong and Terasaki, Ichiro and Huang, Yu, E-mail: yhuang@seas.ucla.edu and California Nanosystems Institute, University of California, Los Angeles, California 90095 and Duan, Xiangfeng, E-mail: xduan@chem.ucla.edu and California Nanosystems Institute, University of California, Los Angeles, California 90095},
abstractNote = {Two-dimensional layered materials have attracted considerable attention since the discovery of graphene. Here we demonstrate that the layered Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8} (BSCO) can be mechanically exfoliated into single- or few-layer nanosheets. The BSCO nanosheets with four or more layers display bulk metallic characteristics, while the nanosheets with three or fewer layers have a layer-number-dependent semiconducting characteristics. Charge transport in bilayer or trilayer BSCO nanosheets exhibits Mott 2D variable-range-hopping (VRH) conduction throughout 2 K–300 K, while the charge transport in monolayers follows the Mott-VRH law above a crossover temperature of 75 K, and is governed by Efros and Shklovskii-VRH laws below 75 K. Disorder potentials and Coulomb charging both contribute to the transport gap of these nanodevices. Our study reveals a distinct layer number-dependent metal-to-semiconductor transition in a new class of 2D materials, and is of great significance for both fundamental investigations and practical devices.},
doi = {10.1063/1.4892975},
journal = {APL Materials},
number = 9,
volume = 2,
place = {United States},
year = {Mon Sep 01 00:00:00 EDT 2014},
month = {Mon Sep 01 00:00:00 EDT 2014}
}