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Title: Highly conducting SrMoO{sub 3} thin films for microwave applications

Abstract

We have measured the microwave resistance of highly conducting perovskite oxide SrMoO{sub 3} thin film coplanar waveguides. The epitaxial SrMoO{sub 3} thin films were grown by pulsed laser deposition and showed low mosaicity and smooth surfaces with a root mean square roughness below 0.3 nm. Layer-by-layer growth could be achieved for film thicknesses up to 400 nm as monitored by reflection high-energy electron diffraction and confirmed by X-ray diffraction. We obtained a constant microwave resistivity of 29 μΩ·cm between 0.1 and 20 GHz by refining the frequency dependence of the transmission coefficients. Our result shows that SrMoO{sub 3} is a viable candidate as a highly conducting electrode material for all-oxide microwave electronic devices.

Authors:
; ; ; ;  [1]; ; ; ;  [2]
  1. Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany)
  2. Institute for Microwave Engineering and Photonics, TU Darmstadt, Merckstraße 25, 64283 Darmstadt (Germany)
Publication Date:
OSTI Identifier:
22303550
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CONDUCTIVITY; ELECTRON DIFFRACTION; ELECTRONIC EQUIPMENT; ENERGY BEAM DEPOSITION; EPITAXY; FREQUENCY DEPENDENCE; GHZ RANGE; LASER RADIATION; LAYERS; MICROWAVE RADIATION; MOLYBDATES; PEROVSKITE; PULSED IRRADIATION; REFLECTION; STRONTIUM COMPOUNDS; SURFACES; THICKNESS; THIN FILMS; WAVEGUIDES; X-RAY DIFFRACTION

Citation Formats

Radetinac, Aldin, E-mail: aldin@oxide.tu-darmstadt.de, Mani, Arzhang, Ziegler, Jürgen, Alff, Lambert, Komissinskiy, Philipp, E-mail: komissinskiy@oxide.tu-darmstadt.de, Melnyk, Sergiy, Nikfalazar, Mohammad, Zheng, Yuliang, and Jakoby, Rolf. Highly conducting SrMoO{sub 3} thin films for microwave applications. United States: N. p., 2014. Web. doi:10.1063/1.4896339.
Radetinac, Aldin, E-mail: aldin@oxide.tu-darmstadt.de, Mani, Arzhang, Ziegler, Jürgen, Alff, Lambert, Komissinskiy, Philipp, E-mail: komissinskiy@oxide.tu-darmstadt.de, Melnyk, Sergiy, Nikfalazar, Mohammad, Zheng, Yuliang, & Jakoby, Rolf. Highly conducting SrMoO{sub 3} thin films for microwave applications. United States. doi:10.1063/1.4896339.
Radetinac, Aldin, E-mail: aldin@oxide.tu-darmstadt.de, Mani, Arzhang, Ziegler, Jürgen, Alff, Lambert, Komissinskiy, Philipp, E-mail: komissinskiy@oxide.tu-darmstadt.de, Melnyk, Sergiy, Nikfalazar, Mohammad, Zheng, Yuliang, and Jakoby, Rolf. Mon . "Highly conducting SrMoO{sub 3} thin films for microwave applications". United States. doi:10.1063/1.4896339.
@article{osti_22303550,
title = {Highly conducting SrMoO{sub 3} thin films for microwave applications},
author = {Radetinac, Aldin, E-mail: aldin@oxide.tu-darmstadt.de and Mani, Arzhang and Ziegler, Jürgen and Alff, Lambert and Komissinskiy, Philipp, E-mail: komissinskiy@oxide.tu-darmstadt.de and Melnyk, Sergiy and Nikfalazar, Mohammad and Zheng, Yuliang and Jakoby, Rolf},
abstractNote = {We have measured the microwave resistance of highly conducting perovskite oxide SrMoO{sub 3} thin film coplanar waveguides. The epitaxial SrMoO{sub 3} thin films were grown by pulsed laser deposition and showed low mosaicity and smooth surfaces with a root mean square roughness below 0.3 nm. Layer-by-layer growth could be achieved for film thicknesses up to 400 nm as monitored by reflection high-energy electron diffraction and confirmed by X-ray diffraction. We obtained a constant microwave resistivity of 29 μΩ·cm between 0.1 and 20 GHz by refining the frequency dependence of the transmission coefficients. Our result shows that SrMoO{sub 3} is a viable candidate as a highly conducting electrode material for all-oxide microwave electronic devices.},
doi = {10.1063/1.4896339},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 11,
volume = 105,
place = {United States},
year = {2014},
month = {9}
}