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Title: Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits

Abstract

Single layer graphene (SLG) grown by chemical vapor deposition (CVD) has been investigated for its prospective application as horizontal interconnects in very large scale integrated circuits. However, the major bottleneck for its successful application is its degraded electronic transport properties due to the resist residual trapped in the grain boundaries and on the surface of the polycrystalline CVD graphene during multi-step lithographic processes, leading to increase in its sheet resistance up to 5 MΩ/sq. To overcome this problem, current induced annealing has been employed, which helps to bring down the sheet resistance to 10 kΩ/sq (of the order of its initial value). Moreover, the maximum current density of ∼1.2 × 10{sup 7 }A/cm{sup 2} has been obtained for SLG (1 × 2.5 μm{sup 2}) on SiO{sub 2}/Si substrate, which is about an order higher than that of conventionally used copper interconnects.

Authors:
; ; ;  [1];  [2]
  1. Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India)
  2. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)
Publication Date:
OSTI Identifier:
22303539
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CHEMICAL VAPOR DEPOSITION; COPPER; CURRENT DENSITY; CURRENTS; GRAIN BOUNDARIES; GRAPHENE; INTEGRATED CIRCUITS; POLYCRYSTALS; SILICON OXIDES; SUBSTRATES; SURFACES; TRAPPING

Citation Formats

Prasad, Neetu, E-mail: neetu.prasad@south.du.ac.in, E-mail: neetu23686@gmail.com, Kumari, Anita, Bhatnagar, P. K., Mathur, P. C., and Bhatia, C. S. Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits. United States: N. p., 2014. Web. doi:10.1063/1.4895802.
Prasad, Neetu, E-mail: neetu.prasad@south.du.ac.in, E-mail: neetu23686@gmail.com, Kumari, Anita, Bhatnagar, P. K., Mathur, P. C., & Bhatia, C. S. Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits. United States. doi:10.1063/1.4895802.
Prasad, Neetu, E-mail: neetu.prasad@south.du.ac.in, E-mail: neetu23686@gmail.com, Kumari, Anita, Bhatnagar, P. K., Mathur, P. C., and Bhatia, C. S. Mon . "Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits". United States. doi:10.1063/1.4895802.
@article{osti_22303539,
title = {Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits},
author = {Prasad, Neetu, E-mail: neetu.prasad@south.du.ac.in, E-mail: neetu23686@gmail.com and Kumari, Anita and Bhatnagar, P. K. and Mathur, P. C. and Bhatia, C. S.},
abstractNote = {Single layer graphene (SLG) grown by chemical vapor deposition (CVD) has been investigated for its prospective application as horizontal interconnects in very large scale integrated circuits. However, the major bottleneck for its successful application is its degraded electronic transport properties due to the resist residual trapped in the grain boundaries and on the surface of the polycrystalline CVD graphene during multi-step lithographic processes, leading to increase in its sheet resistance up to 5 MΩ/sq. To overcome this problem, current induced annealing has been employed, which helps to bring down the sheet resistance to 10 kΩ/sq (of the order of its initial value). Moreover, the maximum current density of ∼1.2 × 10{sup 7 }A/cm{sup 2} has been obtained for SLG (1 × 2.5 μm{sup 2}) on SiO{sub 2}/Si substrate, which is about an order higher than that of conventionally used copper interconnects.},
doi = {10.1063/1.4895802},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 11,
volume = 105,
place = {United States},
year = {2014},
month = {9}
}