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Title: In-situ observation of self-regulated switching behavior in WO{sub 3-x} based resistive switching devices

Abstract

The transmittance of tungsten oxides can be adjusted by oxygen vacancy (V{sub o}) concentration due to its electrochromic property. Here, we report an in-situ observation of resistive switching phenomenon in the oxygen-deficient WO{sub 3-x} planar devices. Besides directly identifying the formation/rupture of dark-colored conductive filaments in oxide layer, the stripe-like WO{sub 3-x} device demonstrated self-regulated switching behavior during the endurance testing, resulting in highly consistent switching parameters after a stabilizing process. For very high V{sub o}s mobility was demonstrated in the WO{sub 3-x} film by the pulse experiment, we suggested that the electric-field-induced homogeneous migration of V{sub o}s was the physical origin for such unique switching characteristics.

Authors:
; ; ; ;  [1]
  1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academic of Sciences, Beijing 100190 (China)
Publication Date:
OSTI Identifier:
22303535
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COLOR; CONCENTRATION RATIO; ELECTRIC FIELDS; ELECTROCHROMISM; EQUIPMENT; FILAMENTS; FILMS; LAYERS; MIGRATION; MOBILITY; OXYGEN; TUNGSTEN OXIDES; VACANCIES

Citation Formats

Hong, D. S., Wang, W. X., Chen, Y. S., E-mail: yschen@aphy.iphy.ac.cn, Sun, J. R., and Shen, B. G. In-situ observation of self-regulated switching behavior in WO{sub 3-x} based resistive switching devices. United States: N. p., 2014. Web. doi:10.1063/1.4895629.
Hong, D. S., Wang, W. X., Chen, Y. S., E-mail: yschen@aphy.iphy.ac.cn, Sun, J. R., & Shen, B. G. In-situ observation of self-regulated switching behavior in WO{sub 3-x} based resistive switching devices. United States. doi:10.1063/1.4895629.
Hong, D. S., Wang, W. X., Chen, Y. S., E-mail: yschen@aphy.iphy.ac.cn, Sun, J. R., and Shen, B. G. Mon . "In-situ observation of self-regulated switching behavior in WO{sub 3-x} based resistive switching devices". United States. doi:10.1063/1.4895629.
@article{osti_22303535,
title = {In-situ observation of self-regulated switching behavior in WO{sub 3-x} based resistive switching devices},
author = {Hong, D. S. and Wang, W. X. and Chen, Y. S., E-mail: yschen@aphy.iphy.ac.cn and Sun, J. R. and Shen, B. G.},
abstractNote = {The transmittance of tungsten oxides can be adjusted by oxygen vacancy (V{sub o}) concentration due to its electrochromic property. Here, we report an in-situ observation of resistive switching phenomenon in the oxygen-deficient WO{sub 3-x} planar devices. Besides directly identifying the formation/rupture of dark-colored conductive filaments in oxide layer, the stripe-like WO{sub 3-x} device demonstrated self-regulated switching behavior during the endurance testing, resulting in highly consistent switching parameters after a stabilizing process. For very high V{sub o}s mobility was demonstrated in the WO{sub 3-x} film by the pulse experiment, we suggested that the electric-field-induced homogeneous migration of V{sub o}s was the physical origin for such unique switching characteristics.},
doi = {10.1063/1.4895629},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 11,
volume = 105,
place = {United States},
year = {2014},
month = {9}
}