skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Manipulating surface diffusion and elastic interactions to obtain quantum dot multilayer arrangements over different length scales

Abstract

An innovative multilayer growth of InAs quantum dots on GaAs(100) is demonstrated to lead to self-aggregation of correlated quantum dot chains over mesoscopic distances. The fundamental idea is that at critical growth conditions is possible to drive the dot nucleation only at precise locations corresponding to the local minima of the Indium chemical potential. Differently from the known dot multilayers, where nucleation of new dots on top of the buried ones is driven by the surface strain originating from the dots below, here the spatial correlations and nucleation of additional dots are mostly dictated by a self-engineering of the surface occurring during the growth, close to the critical conditions for dot formation under the fixed oblique direction of the incoming As flux, that drives the In surface diffusion.

Authors:
;  [1];  [2]; ; ;  [3];  [4]; ;  [5]
  1. Istituto di Struttura della Materia, CNR, Via del Fosso del Cavaliere 100, 00133 Rome (Italy)
  2. (Italy)
  3. Università di Roma “Tor Vergata”, Dipartimento di Fisica, via della Ricerca Scientifica 1, 00133 Rome (Italy)
  4. Dipartimento di Scienze Fisiche, Informatiche e Matematiche (FIM), Università di Modena e Reggio Emilia, and Centro S3 CNR-Istituto Nanoscienze, Via Campi 213/A, 4100 Modena (Italy)
  5. CNR-IMM, Strada VIII, 5, 95121 Catania (Italy)
Publication Date:
OSTI Identifier:
22303505
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AGGLOMERATION; CORRELATIONS; CRYSTAL GROWTH; DIFFUSION; ELASTICITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERACTIONS; LAYERS; NUCLEATION; QUANTUM DOTS; STRAINS; SURFACES

Citation Formats

Placidi, E., E-mail: ernesto.placidi@ism.cnr.it, Arciprete, F., Università di Roma “Tor Vergata”, Dipartimento di Fisica, via della Ricerca Scientifica 1, 00133 Rome, Latini, V., Latini, S., Patella, F., Magri, R., Scuderi, M., and Nicotra, G. Manipulating surface diffusion and elastic interactions to obtain quantum dot multilayer arrangements over different length scales. United States: N. p., 2014. Web. doi:10.1063/1.4896028.
Placidi, E., E-mail: ernesto.placidi@ism.cnr.it, Arciprete, F., Università di Roma “Tor Vergata”, Dipartimento di Fisica, via della Ricerca Scientifica 1, 00133 Rome, Latini, V., Latini, S., Patella, F., Magri, R., Scuderi, M., & Nicotra, G. Manipulating surface diffusion and elastic interactions to obtain quantum dot multilayer arrangements over different length scales. United States. doi:10.1063/1.4896028.
Placidi, E., E-mail: ernesto.placidi@ism.cnr.it, Arciprete, F., Università di Roma “Tor Vergata”, Dipartimento di Fisica, via della Ricerca Scientifica 1, 00133 Rome, Latini, V., Latini, S., Patella, F., Magri, R., Scuderi, M., and Nicotra, G. Mon . "Manipulating surface diffusion and elastic interactions to obtain quantum dot multilayer arrangements over different length scales". United States. doi:10.1063/1.4896028.
@article{osti_22303505,
title = {Manipulating surface diffusion and elastic interactions to obtain quantum dot multilayer arrangements over different length scales},
author = {Placidi, E., E-mail: ernesto.placidi@ism.cnr.it and Arciprete, F. and Università di Roma “Tor Vergata”, Dipartimento di Fisica, via della Ricerca Scientifica 1, 00133 Rome and Latini, V. and Latini, S. and Patella, F. and Magri, R. and Scuderi, M. and Nicotra, G.},
abstractNote = {An innovative multilayer growth of InAs quantum dots on GaAs(100) is demonstrated to lead to self-aggregation of correlated quantum dot chains over mesoscopic distances. The fundamental idea is that at critical growth conditions is possible to drive the dot nucleation only at precise locations corresponding to the local minima of the Indium chemical potential. Differently from the known dot multilayers, where nucleation of new dots on top of the buried ones is driven by the surface strain originating from the dots below, here the spatial correlations and nucleation of additional dots are mostly dictated by a self-engineering of the surface occurring during the growth, close to the critical conditions for dot formation under the fixed oblique direction of the incoming As flux, that drives the In surface diffusion.},
doi = {10.1063/1.4896028},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 11,
volume = 105,
place = {United States},
year = {2014},
month = {9}
}