skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electronic structure evolution in doping of fullerene (C{sub 60}) by molybdenum trioxide

Abstract

Molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS), and inverse photoemission spectroscopy (IPES). The lowest unoccupied molecular orbital and the highest occupied molecular orbital (HOMO) can be observed directly with IPES and UPS. It is observed that the Fermi level position in fullerene is modified by molybdenum oxide doping, and the HOMO onset is shifted to less than 0.3 eV below the Fermi level. The energy level shift is found to saturate at doping ratio of 18%. Till this stage, the shift depends on the doping concentration in a semi-logarithmic scale, with a slope substantially higher than that of the traditional semiconductor theory. The XPS results indicate that charge transfer continues beyond the energy level shift saturation till the doping ratio reaches 66% as evidenced by the Mo{sup 5+} component. At higher doping concentration, there is more Mo{sup 6+} component, which indicates the saturation of the charge transfer between MoO{sub x} and C{sub 60}.

Authors:
 [1];  [1];  [2]
  1. Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States)
  2. (China)
Publication Date:
OSTI Identifier:
22303496
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRONIC STRUCTURE; EV RANGE; FERMI LEVEL; FULLERENES; MOLECULAR ORBITAL METHOD; MOLYBDENUM IONS; MOLYBDENUM OXIDES; PHOTOEMISSION; SATURATION; SEMICONDUCTOR MATERIALS; ULTRAVIOLET RADIATION; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Wang, Chenggong, Gao, Yongli, E-mail: ygao@pas.rochester.edu, and Hunan Key Laboratory for Super-microstructure and Ultrafast Process, College of Physics and Electronics, Central South University, Changsha, Hunan 410083. Electronic structure evolution in doping of fullerene (C{sub 60}) by molybdenum trioxide. United States: N. p., 2014. Web. doi:10.1063/1.4895784.
Wang, Chenggong, Gao, Yongli, E-mail: ygao@pas.rochester.edu, & Hunan Key Laboratory for Super-microstructure and Ultrafast Process, College of Physics and Electronics, Central South University, Changsha, Hunan 410083. Electronic structure evolution in doping of fullerene (C{sub 60}) by molybdenum trioxide. United States. doi:10.1063/1.4895784.
Wang, Chenggong, Gao, Yongli, E-mail: ygao@pas.rochester.edu, and Hunan Key Laboratory for Super-microstructure and Ultrafast Process, College of Physics and Electronics, Central South University, Changsha, Hunan 410083. Mon . "Electronic structure evolution in doping of fullerene (C{sub 60}) by molybdenum trioxide". United States. doi:10.1063/1.4895784.
@article{osti_22303496,
title = {Electronic structure evolution in doping of fullerene (C{sub 60}) by molybdenum trioxide},
author = {Wang, Chenggong and Gao, Yongli, E-mail: ygao@pas.rochester.edu and Hunan Key Laboratory for Super-microstructure and Ultrafast Process, College of Physics and Electronics, Central South University, Changsha, Hunan 410083},
abstractNote = {Molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS), and inverse photoemission spectroscopy (IPES). The lowest unoccupied molecular orbital and the highest occupied molecular orbital (HOMO) can be observed directly with IPES and UPS. It is observed that the Fermi level position in fullerene is modified by molybdenum oxide doping, and the HOMO onset is shifted to less than 0.3 eV below the Fermi level. The energy level shift is found to saturate at doping ratio of 18%. Till this stage, the shift depends on the doping concentration in a semi-logarithmic scale, with a slope substantially higher than that of the traditional semiconductor theory. The XPS results indicate that charge transfer continues beyond the energy level shift saturation till the doping ratio reaches 66% as evidenced by the Mo{sup 5+} component. At higher doping concentration, there is more Mo{sup 6+} component, which indicates the saturation of the charge transfer between MoO{sub x} and C{sub 60}.},
doi = {10.1063/1.4895784},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 11,
volume = 105,
place = {United States},
year = {2014},
month = {9}
}