Growth model of silicon nanoislands on sapphire
- Lobachevsky University of Nizhni Novgorod (Russian Federation)
A growth model of silicon nanoislands on silicon by molecular-beam epitaxy is refined. It is shown that silicon islands grow due to the diffusion of material from the wetting layer, with the contribution from direct hits of atoms to this growth being nearly zero.
- OSTI ID:
- 22300422
- Journal Information:
- Semiconductors, Vol. 47, Issue 12; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Study of the crystal structure of silicon nanoislands on sapphire
Molecular beam epitaxy of InN dots on nitrided sapphire
Selective growth of Pb islands on graphene/SiC buffer layers
Journal Article
·
Sun Feb 15 00:00:00 EST 2015
· Semiconductors
·
OSTI ID:22300422
Molecular beam epitaxy of InN dots on nitrided sapphire
Journal Article
·
Fri Apr 20 00:00:00 EDT 2007
· Journal of Crystal Growth
·
OSTI ID:22300422
+1 more
Selective growth of Pb islands on graphene/SiC buffer layers
Journal Article
·
Sat Feb 14 00:00:00 EST 2015
· Journal of Applied Physics
·
OSTI ID:22300422
+2 more