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Title: Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

Abstract

Ferroelectric hafnium oxide films were fabricated by chemical solution deposition with a remnant polarization of >13 μC/cm{sup 2}. The samples were prepared with 5.2 mol. % yttrium-doping and the thickness varied from 18 nm to 70 nm. The hafnium oxide layer was integrated into a metal-insulator-metal capacitor using platinum electrodes. Due to the processing procedure, no thickness dependence of the ferroelectric properties was observed. To confirm the ferroelectric nature of the deposited samples, polarization, capacitance, and piezoelectric displacement measurements were performed. However, no evidence of the orthorhombic phase was found which has been proposed to be the non-centrosymmetric, ferroelectric phase in HfO{sub 2}.

Authors:
; ; ;  [1];  [1]
  1. Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, Sommerfeldstraße 24, D-52074 Aachen (Germany)
Publication Date:
OSTI Identifier:
22300221
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CAPACITANCE; DEPOSITION; DOPED MATERIALS; ELECTRODES; FERROELECTRIC MATERIALS; FILMS; HAFNIUM OXIDES; LAYERS; ORTHORHOMBIC LATTICES; PIEZOELECTRICITY; PLATINUM; POLARIZATION; SOLUTIONS; THICKNESS; YTTRIUM ADDITIONS

Citation Formats

Starschich, S., Griesche, D., Schneller, T., Böttger, U., Waser, R., and Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, D-52425 Jülich. Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes. United States: N. p., 2014. Web. doi:10.1063/1.4879283.
Starschich, S., Griesche, D., Schneller, T., Böttger, U., Waser, R., & Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, D-52425 Jülich. Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes. United States. https://doi.org/10.1063/1.4879283
Starschich, S., Griesche, D., Schneller, T., Böttger, U., Waser, R., and Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, D-52425 Jülich. 2014. "Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes". United States. https://doi.org/10.1063/1.4879283.
@article{osti_22300221,
title = {Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes},
author = {Starschich, S. and Griesche, D. and Schneller, T. and Böttger, U. and Waser, R. and Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, D-52425 Jülich},
abstractNote = {Ferroelectric hafnium oxide films were fabricated by chemical solution deposition with a remnant polarization of >13 μC/cm{sup 2}. The samples were prepared with 5.2 mol. % yttrium-doping and the thickness varied from 18 nm to 70 nm. The hafnium oxide layer was integrated into a metal-insulator-metal capacitor using platinum electrodes. Due to the processing procedure, no thickness dependence of the ferroelectric properties was observed. To confirm the ferroelectric nature of the deposited samples, polarization, capacitance, and piezoelectric displacement measurements were performed. However, no evidence of the orthorhombic phase was found which has been proposed to be the non-centrosymmetric, ferroelectric phase in HfO{sub 2}.},
doi = {10.1063/1.4879283},
url = {https://www.osti.gov/biblio/22300221}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 104,
place = {United States},
year = {Mon May 19 00:00:00 EDT 2014},
month = {Mon May 19 00:00:00 EDT 2014}
}