Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202{sup ¯}1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]

Journal Article · Mon May 19 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4879638· OSTI ID:22300186

Grzanka, S.; Skierbiszewski, C. ^[1]; Chèze, C. ^[2]; Turski, H.; Muziol, G.; Krysko, M.; Grzanka, E.; Sochacki, T. ^[1]; Hauswald, C.; Brandt, O. ^[3]; Siekacz, M. ^[1]; Kucharski, R. ^[4]; Remmele, T.; Albrecht, M. ^[5]

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1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland)
2. TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw (Poland)
3. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
4. Ammono S.A., Czerwonego Krzyża 2/31, 00-377 Warsaw (Poland)
5. Leibniz Institute for Crystal Growth, Max-Born Strasse 2, Berlin 12489 (Germany)

No abstract prepared.

• OSTI ID: 22300186
• Journal Information: Applied Physics Letters, Vol. 104, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GALLIUM NITRIDES
LIGHT EMITTING DIODES
MOLECULAR BEAM EPITAXY
PLASMA
SUBSTRATES
ULTRAVIOLET RADIATION