Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202{sup ¯}1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland)
- TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw (Poland)
- Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
- Ammono S.A., Czerwonego Krzyża 2/31, 00-377 Warsaw (Poland)
- Leibniz Institute for Crystal Growth, Max-Born Strasse 2, Berlin 12489 (Germany)
No abstract prepared.
- OSTI ID:
- 22300186
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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