Voltage-controlled switching and thermal effects in VO{sub 2} nano-gap junctions
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4 (Canada)
- Defence Research and Development Canada - Valcartier, 2459 Pie-XI Blvd. North, Quebec, Quebec G3J 1X5 (Canada)
Voltage-controlled switching in lateral VO{sub 2} nano-gap junctions with different gap lengths and thermal properties was investigated. The effect of Joule heating on the phase transition was found to be strongly influenced by the device geometry, the contact material, and the current. Our results indicate that the VO{sub 2} phase transition was likely initiated electronically, which was sometimes followed by a secondary thermally induced transition.
- OSTI ID:
- 22300101
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 22; Other Information: (c) 2014 Crown; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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