Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

Wang, Q.; Zhao, S.; Connie, A. T.; Shih, I.; Gonzalez, T.; Andrews, M. P.; Du, X. Z.; Lin, J. Y.; Jiang, H. X.

doi:10.1063/1.4881558

Title: Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

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Abstract

The optical properties of catalyst-free AlN nanowires grown on Si substrates by molecular beam epitaxy were investigated. Such nanowires are nearly free of strain, with strong free exciton emission measured at room temperature. The photoluminescence intensity is significantly enhanced, compared to previously reported AlN epilayer. Moreover, the presence of phonon replicas with an energy separation of ∼100 meV was identified to be associated with the surface-optical phonon rather than the commonly reported longitudinal-optical phonon, which is further supported by the micro-Raman scattering experiments.

Authors:

Wang, Q.; Zhao, S.; Connie, A. T.; Shih, I.; Gonzalez, T.; Andrews, M. P. ^[1]; Du, X. Z.; Lin, J. Y.; Jiang, H. X. ^[2]

Department of Chemistry, McGill University, 801 Sherbrooke St West, Montreal, Quebec H3A 0B8 (Canada)
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

Publication Date:: Mon Jun 02 00:00:00 EDT 2014

OSTI Identifier:: 22300090

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 104; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM NITRIDES; CATALYSTS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHONONS; PHOTOLUMINESCENCE; QUANTUM WIRES; RAMAN EFFECT; SCATTERING; STRAINS; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; NANOWIRES

Citation Formats


                    Wang, Q., Zhao, S., Connie, A. T., Shih, I., Mi, Z., E-mail: zetian.mi@mcgill.ca, Gonzalez, T., Andrews, M. P., Du, X. Z., Lin, J. Y., and Jiang, H. X. Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4881558.

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                    Wang, Q., Zhao, S., Connie, A. T., Shih, I., Mi, Z., E-mail: zetian.mi@mcgill.ca, Gonzalez, T., Andrews, M. P., Du, X. Z., Lin, J. Y., & Jiang, H. X. Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates.  United States.  https://doi.org/10.1063/1.4881558

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                    Wang, Q., Zhao, S., Connie, A. T., Shih, I., Mi, Z., E-mail: zetian.mi@mcgill.ca, Gonzalez, T., Andrews, M. P., Du, X. Z., Lin, J. Y., and Jiang, H. X. 2014.  
        "Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates".  United States.  https://doi.org/10.1063/1.4881558.

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@article{osti_22300090,

  title        = {Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates},

  author       = {Wang, Q. and Zhao, S. and Connie, A. T. and Shih, I. and Mi, Z., E-mail: zetian.mi@mcgill.ca and Gonzalez, T. and Andrews, M. P. and Du, X. Z. and Lin, J. Y. and Jiang, H. X.},

  abstractNote = {The optical properties of catalyst-free AlN nanowires grown on Si substrates by molecular beam epitaxy were investigated. Such nanowires are nearly free of strain, with strong free exciton emission measured at room temperature. The photoluminescence intensity is significantly enhanced, compared to previously reported AlN epilayer. Moreover, the presence of phonon replicas with an energy separation of ∼100 meV was identified to be associated with the surface-optical phonon rather than the commonly reported longitudinal-optical phonon, which is further supported by the micro-Raman scattering experiments.},

  doi          = {10.1063/1.4881558},

  url          = {https://www.osti.gov/biblio/22300090},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 22,

  volume       = 104,

  place        = {United States},

  year         = {Mon Jun 02 00:00:00 EDT 2014},

  month        = {Mon Jun 02 00:00:00 EDT 2014}

}

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