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Title: Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes

Abstract

Large-scale Ag nanodisks (NDs) arrays fabricated using nanospherical-lens lithography (NLL) are embedded in p-GaN layer of an InGaN/GaN light-emitting diode (LED) for generating localized surface plasmon (LSP) coupling with the radiating dipoles in the quantum-well (QWs). Based on the Ag NDs with the controlled surface coverage, LSP leads to the improved crystalline quality of regrowth p-GaN, increased photoluminescence (PL) intensity, reduced PL decay time, and enhanced output power of LED. Compared with the LED without Ag NDs, the optical output power at a current of 350 mA of the LSP-enhanced LEDs with Ag NDs having a distance of 20 and 35 nm to QWs is increased by 26.7% and 31.1%, respectively. The electrical characteristics and optical properties of LEDs with embedded Ag NPs are dependent on the distance of between Ag NPs and QWs region. The LED with Ag NDs array structure is also found to exhibit reduced emission divergence, compared to that without Ag NDs.

Authors:
; ; ; ; ; ; ; ; ;  [1];  [2]
  1. State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 (China)
  2. National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100080 (China)
Publication Date:
OSTI Identifier:
22300071
Resource Type:
Journal Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 4; Journal Issue: 6; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; COUPLING; DIPOLES; GALLIUM NITRIDES; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM WELLS; SURFACES

Citation Formats

Wei, Tongbo, Wu, Kui, Sun, Bo, Zhang, Yonghui, Chen, Yu, Huo, Ziqiang, Hu, Qiang, Wang, Junxi, Zeng, Yiping, Li, Jinmin, and Lan, Ding. Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes. United States: N. p., 2014. Web. doi:10.1063/1.4882179.
Wei, Tongbo, Wu, Kui, Sun, Bo, Zhang, Yonghui, Chen, Yu, Huo, Ziqiang, Hu, Qiang, Wang, Junxi, Zeng, Yiping, Li, Jinmin, & Lan, Ding. Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes. United States. doi:10.1063/1.4882179.
Wei, Tongbo, Wu, Kui, Sun, Bo, Zhang, Yonghui, Chen, Yu, Huo, Ziqiang, Hu, Qiang, Wang, Junxi, Zeng, Yiping, Li, Jinmin, and Lan, Ding. Sun . "Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes". United States. doi:10.1063/1.4882179.
@article{osti_22300071,
title = {Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes},
author = {Wei, Tongbo and Wu, Kui and Sun, Bo and Zhang, Yonghui and Chen, Yu and Huo, Ziqiang and Hu, Qiang and Wang, Junxi and Zeng, Yiping and Li, Jinmin and Lan, Ding},
abstractNote = {Large-scale Ag nanodisks (NDs) arrays fabricated using nanospherical-lens lithography (NLL) are embedded in p-GaN layer of an InGaN/GaN light-emitting diode (LED) for generating localized surface plasmon (LSP) coupling with the radiating dipoles in the quantum-well (QWs). Based on the Ag NDs with the controlled surface coverage, LSP leads to the improved crystalline quality of regrowth p-GaN, increased photoluminescence (PL) intensity, reduced PL decay time, and enhanced output power of LED. Compared with the LED without Ag NDs, the optical output power at a current of 350 mA of the LSP-enhanced LEDs with Ag NDs having a distance of 20 and 35 nm to QWs is increased by 26.7% and 31.1%, respectively. The electrical characteristics and optical properties of LEDs with embedded Ag NPs are dependent on the distance of between Ag NPs and QWs region. The LED with Ag NDs array structure is also found to exhibit reduced emission divergence, compared to that without Ag NDs.},
doi = {10.1063/1.4882179},
journal = {AIP Advances},
issn = {2158-3226},
number = 6,
volume = 4,
place = {United States},
year = {2014},
month = {6}
}