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Title: Effects of sub-bandgap illumination on electrical properties and detector performances of CdZnTe:In

Abstract

The effects of sub-bandgap illumination on electrical properties of CdZnTe:In crystals and spectroscopic performances of the fabricated detectors were discussed. The excitation process of charge carriers through thermal and optical transitions at the deep trap could be described by the modified Shockley-Read-Hall model. The ionization probability of the deep donor shows an increase under illumination, which should be responsible for the variation of electrical properties within CdZnTe bulk materials with infrared (IR) irradiation. By applying Ohm's law, diffusion model and interfacial layer-thermionic-diffusion theory, we obtain the decrease of bulk resistivity and the increase of space charge density in the illuminated crystals. Moreover, the illumination induced ionization will further contribute to improving carrier transport property and charge collection efficiency. Consequently, the application of IR irradiation in the standard working environment is of great significance to improve the spectroscopic characteristics of CdZnTe radiation detectors.

Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi 710072 (China)
Publication Date:
OSTI Identifier:
22300010
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM COMPOUNDS; CHARGE CARRIERS; CHARGE COLLECTION; CRYSTALS; DIFFUSION; ELECTRICAL PROPERTIES; ENERGY-LEVEL TRANSITIONS; EXCITATION; ILLUMINANCE; INDIUM ADDITIONS; IONIZATION; IRRADIATION; LAYERS; OHM LAW; RADIATION DETECTORS; SPACE CHARGE; TELLURIUM COMPOUNDS; TRAPS; ZINC COMPOUNDS

Citation Formats

Xu, Lingyan, Jie, Wanqi, Zha, Gangqiang, Feng, Tao, Wang, Ning, Xi, Shouzhi, Fu, Xu, Zhang, Wenlong, Xu, Yadong, and Wang, Tao. Effects of sub-bandgap illumination on electrical properties and detector performances of CdZnTe:In. United States: N. p., 2014. Web. doi:10.1063/1.4883403.
Xu, Lingyan, Jie, Wanqi, Zha, Gangqiang, Feng, Tao, Wang, Ning, Xi, Shouzhi, Fu, Xu, Zhang, Wenlong, Xu, Yadong, & Wang, Tao. Effects of sub-bandgap illumination on electrical properties and detector performances of CdZnTe:In. United States. https://doi.org/10.1063/1.4883403
Xu, Lingyan, Jie, Wanqi, Zha, Gangqiang, Feng, Tao, Wang, Ning, Xi, Shouzhi, Fu, Xu, Zhang, Wenlong, Xu, Yadong, and Wang, Tao. Mon . "Effects of sub-bandgap illumination on electrical properties and detector performances of CdZnTe:In". United States. https://doi.org/10.1063/1.4883403.
@article{osti_22300010,
title = {Effects of sub-bandgap illumination on electrical properties and detector performances of CdZnTe:In},
author = {Xu, Lingyan and Jie, Wanqi and Zha, Gangqiang and Feng, Tao and Wang, Ning and Xi, Shouzhi and Fu, Xu and Zhang, Wenlong and Xu, Yadong and Wang, Tao},
abstractNote = {The effects of sub-bandgap illumination on electrical properties of CdZnTe:In crystals and spectroscopic performances of the fabricated detectors were discussed. The excitation process of charge carriers through thermal and optical transitions at the deep trap could be described by the modified Shockley-Read-Hall model. The ionization probability of the deep donor shows an increase under illumination, which should be responsible for the variation of electrical properties within CdZnTe bulk materials with infrared (IR) irradiation. By applying Ohm's law, diffusion model and interfacial layer-thermionic-diffusion theory, we obtain the decrease of bulk resistivity and the increase of space charge density in the illuminated crystals. Moreover, the illumination induced ionization will further contribute to improving carrier transport property and charge collection efficiency. Consequently, the application of IR irradiation in the standard working environment is of great significance to improve the spectroscopic characteristics of CdZnTe radiation detectors.},
doi = {10.1063/1.4883403},
url = {https://www.osti.gov/biblio/22300010}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 104,
place = {United States},
year = {2014},
month = {6}
}