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Title: Spin filtering in a δ-doped magnetic-electric-barrier nanostructure

Abstract

We report a theoretical study on spin-polarized transport in a δ-doped magnetic-electric-barrier nanostructure, which can be realized in experiments by depositing two ferromagnetic stripes on top and bottom of a semiconductor heterostructure under an applied voltage and by using atomic layer doping technique. The spin-polarized behavior of the electron in this device is found to be quite sensitive to the δ-doping. One can conveniently tune the degree of the electron spin polarization by adjusting the weight and/or position of the δ-doping. Thus, the involved nansosystem can be employed as a controllable spin filter, which may be helpful for exploiting new spin-polarized source for spintronics applications.

Authors:
; ; ;  [1]
  1. College of Science, Guilin University of Technology, Guilin 541004 (China)
Publication Date:
OSTI Identifier:
22299769
Resource Type:
Journal Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 4; Journal Issue: 9; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; DEPOSITS; DOPED MATERIALS; ELECTRIC POTENTIAL; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SPIN; SPIN ORIENTATION

Citation Formats

Li, Shuai, Lu, Mao-Wang, E-mail: maowanglu@126.com, Jiang, Ya-Qing, and Chen, Sai-Yan. Spin filtering in a δ-doped magnetic-electric-barrier nanostructure. United States: N. p., 2014. Web. doi:10.1063/1.4895386.
Li, Shuai, Lu, Mao-Wang, E-mail: maowanglu@126.com, Jiang, Ya-Qing, & Chen, Sai-Yan. Spin filtering in a δ-doped magnetic-electric-barrier nanostructure. United States. doi:10.1063/1.4895386.
Li, Shuai, Lu, Mao-Wang, E-mail: maowanglu@126.com, Jiang, Ya-Qing, and Chen, Sai-Yan. Mon . "Spin filtering in a δ-doped magnetic-electric-barrier nanostructure". United States. doi:10.1063/1.4895386.
@article{osti_22299769,
title = {Spin filtering in a δ-doped magnetic-electric-barrier nanostructure},
author = {Li, Shuai and Lu, Mao-Wang, E-mail: maowanglu@126.com and Jiang, Ya-Qing and Chen, Sai-Yan},
abstractNote = {We report a theoretical study on spin-polarized transport in a δ-doped magnetic-electric-barrier nanostructure, which can be realized in experiments by depositing two ferromagnetic stripes on top and bottom of a semiconductor heterostructure under an applied voltage and by using atomic layer doping technique. The spin-polarized behavior of the electron in this device is found to be quite sensitive to the δ-doping. One can conveniently tune the degree of the electron spin polarization by adjusting the weight and/or position of the δ-doping. Thus, the involved nansosystem can be employed as a controllable spin filter, which may be helpful for exploiting new spin-polarized source for spintronics applications.},
doi = {10.1063/1.4895386},
journal = {AIP Advances},
issn = {2158-3226},
number = 9,
volume = 4,
place = {United States},
year = {2014},
month = {9}
}