Interfacial spectroscopic characterization of organic/ferromagnet hetero-junction of 3,4,9,10-perylene-teracarboxylic dianhydride-based organic spin valves

Journal Article · Mon Feb 24 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4866164· OSTI ID:22293119

Hong, Jhen-Yong; Ou Yang, Kui-Hon; Li, Kai-Shin ^[1]; Wang, Bo-Yao ^[1]; Shiu, Hung-Wei; Chen, Chia-Hao; Chan, Yuet-Loy; Wei, Der-Hsin; Chang, Fan-Hsiu; Lin, Hong-Ji ^[2]; Chiang, Wen-Chung ^[3]; Lin, Minn-Tsong ^[1]

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1. Department of Physics, National Taiwan University, 10617 Taipei, Taiwan (China)
2. National Synchrotron Radiation Research Center, 30076 Hsinchu, Taiwan (China)
3. Department of Physics, Chinese Culture University, 11114 Taipei, Taiwan (China)

We report interfacial characterization of 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA)-based organic spin valves (OSV) dusted with a thin layer of partially oxidized alumina at the organic semiconductor (OSC)/ferromagnet (FM) interfaces. Up to 13.5% magnetoresistance is achieved at room temperature. X-ray photoelectron spectroscopy measurements reveal interfacial electronic interaction between PTCDA and FM while the application of a thin alumina layer at the PTCDA/FM interfaces prevents the electronic hybridization and effectively preserves the spin injection into the OSC spacer. This finding demonstrates the critical effect of interfacial structure on magnetotransport behavior in OSV.

• OSTI ID: 22293119
• Journal Information: Applied Physics Letters, Vol. 104, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
CONNECTORS
HYBRIDIZATION
INTERFACES
MAGNETORESISTANCE
ORGANIC SEMICONDUCTORS
PERYLENE
SEMICONDUCTOR JUNCTIONS
SPACERS
SPIN
THIN FILMS
VALVES
X-RAY PHOTOELECTRON SPECTROSCOPY