Non-hysteretic superconducting quantum interference proximity transistor with enhanced responsivity

Journal Article · Mon Feb 24 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4866584· OSTI ID:22293105

Meschke, M.; Pekola, J. P. ^[1]

---

1. O.V. Lounasmaa Laboratory, Aalto University School of Science, POB 13500, FI-00076 AALTO (Finland)

This Letter presents fabrication and characterization of an optimized superconducting quantum interference proximity transistor. The present device, characterized by reduced tunnel junction area and shortened normal-metal section, demonstrates no hysteresis at low temperatures as we increased the Josephson inductance of the weak link by decreasing its cross section. It has consequently almost an order of magnitude improved magnetic field responsivity as compared to the earlier design. The modulation of both the current and the voltage across the junction have been measured as a function of magnetic flux piercing the superconducting loop.

• OSTI ID: 22293105
• Journal Information: Applied Physics Letters, Vol. 104, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPARATIVE EVALUATIONS
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
HYSTERESIS
INDUCTANCE
INTERFERENCE
MAGNETIC FIELDS
MAGNETIC FLUX
SUPERCONDUCTING JUNCTIONS
TEMPERATURE RANGE 0065-0273 K
TRANSISTORS
TUNNEL EFFECT