Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications
- Department of Photoelectronics Information, Chosun College of Science and Technology, Gwangju (Korea, Republic of)
- Digital Broadcasting Examination, Korean Intellectual Property Office, Daejeon, Suwon 440-746 (Korea, Republic of)
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong, 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)
Graphical abstract: The effect of O{sub 2} plasma treatment on the surface and the work function of ITO films. - Highlights: • ITO films were prepared on the glass substrate by RF magnetron sputtering method. • Effects of O{sub 2} plasma treatment on the properties of ITO films were investigated. • The work function of ITO film was changed from 4.67 to 5.66 eV by plasma treatment. - Abstract: The influence of oxygen plasma treatment on the electro-optical and structural properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering method were investigated. The films were exposed at different O{sub 2} plasma powers and for various durations by using the plasma enhanced chemical vapor deposition (PECVD) system. The resistivity of the ITO films was almost constant, regardless of the plasma treatment conditions. Although the optical transmittance of ITO films was little changed by the plasma power, the prolonged treatment slightly increased the transmittance. The work function of ITO film was changed from 4.67 eV to 5.66 eV at the plasma treatment conditions of 300 W and 60 min.
- OSTI ID:
- 22290364
- Journal Information:
- Materials Research Bulletin, Vol. 48, Issue 12; Conference: ISFM 2012: 5. international symposium on functional materials, Perth, WA (Australia), 17-20 Dec 2012; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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