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Title: Fabrication and characterization of n-type aluminum-boron co-doped ZnO on p-type silicon (n-AZB/p-Si) heterojunction diodes

Abstract

Graphical abstract: - Highlights: • n-AZB/p-Si heterojunction diodes were formed. • n-AZB/p-Si diode annealed at 700 °C showed best rectifying behavior. • Zn{sub 2}SiO{sub 4} was formed at 800 °C. • n and ϕ{sub b} were estimated to be 1.63 and 0.4 eV, respectively, at 700 °C. • Tailoring of BG was attributed to annealing induced stresses in the films. - Abstract: In this paper, the growth of n-type aluminum boron co-doped ZnO (n-AZB) on a p-type silicon (p-Si) substrate by sol–gel method using spin coating technique is reported. The n-AZB/p-Si heterojunctions were annealed at different temperatures ranging from 400 to 800 °C. The crystallite size of the AZB nanostructures was found to vary from 28 to 38 nm with the variation in annealing temperature. The band gap of the AZB decreased from 3.29 to 3.27 eV, with increasing annealing temperature from 400 to 700 °C and increased to 3.30 eV at 800 °C probably due to the formation of Zn{sub 2}SiO{sub 4} at the interface. The band gap variation is explained in terms of annealing induced stress in the AZB. The n-AZB/p-Si heterojunction exhibited diode behavior. The best rectifying behavior was exhibited at 700 °C.

Authors:
 [1];  [2];  [3];  [2]; ;  [1]
  1. Department of Physics, University of the Free State, Bloemfontein ZA-9300 (South Africa)
  2. Department of Electronic Science, University of Delhi South Campus, New Delhi 110 021 (India)
  3. (India)
Publication Date:
OSTI Identifier:
22285194
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 48; Journal Issue: 11; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM; ANNEALING; BORON; DOPED MATERIALS; ELECTRICAL PROPERTIES; HETEROJUNCTIONS; OPTICAL PROPERTIES; SILICON; SPIN-ON COATING; THIN FILMS; ZINC OXIDES; ZINC SILICATES

Citation Formats

Kumar, Vinod, E-mail: vinod.phy@gmail.com, Singh, Neetu, Department of Electronics, Keshav Mahavidyalaya, University of Delhi 110 034, Kapoor, Avinashi, Ntwaeaborwa, Odireleng M., and Swart, Hendrik C.. Fabrication and characterization of n-type aluminum-boron co-doped ZnO on p-type silicon (n-AZB/p-Si) heterojunction diodes. United States: N. p., 2013. Web. doi:10.1016/J.MATERRESBULL.2013.07.061.
Kumar, Vinod, E-mail: vinod.phy@gmail.com, Singh, Neetu, Department of Electronics, Keshav Mahavidyalaya, University of Delhi 110 034, Kapoor, Avinashi, Ntwaeaborwa, Odireleng M., & Swart, Hendrik C.. Fabrication and characterization of n-type aluminum-boron co-doped ZnO on p-type silicon (n-AZB/p-Si) heterojunction diodes. United States. doi:10.1016/J.MATERRESBULL.2013.07.061.
Kumar, Vinod, E-mail: vinod.phy@gmail.com, Singh, Neetu, Department of Electronics, Keshav Mahavidyalaya, University of Delhi 110 034, Kapoor, Avinashi, Ntwaeaborwa, Odireleng M., and Swart, Hendrik C.. Fri . "Fabrication and characterization of n-type aluminum-boron co-doped ZnO on p-type silicon (n-AZB/p-Si) heterojunction diodes". United States. doi:10.1016/J.MATERRESBULL.2013.07.061.
@article{osti_22285194,
title = {Fabrication and characterization of n-type aluminum-boron co-doped ZnO on p-type silicon (n-AZB/p-Si) heterojunction diodes},
author = {Kumar, Vinod, E-mail: vinod.phy@gmail.com and Singh, Neetu and Department of Electronics, Keshav Mahavidyalaya, University of Delhi 110 034 and Kapoor, Avinashi and Ntwaeaborwa, Odireleng M. and Swart, Hendrik C.},
abstractNote = {Graphical abstract: - Highlights: • n-AZB/p-Si heterojunction diodes were formed. • n-AZB/p-Si diode annealed at 700 °C showed best rectifying behavior. • Zn{sub 2}SiO{sub 4} was formed at 800 °C. • n and ϕ{sub b} were estimated to be 1.63 and 0.4 eV, respectively, at 700 °C. • Tailoring of BG was attributed to annealing induced stresses in the films. - Abstract: In this paper, the growth of n-type aluminum boron co-doped ZnO (n-AZB) on a p-type silicon (p-Si) substrate by sol–gel method using spin coating technique is reported. The n-AZB/p-Si heterojunctions were annealed at different temperatures ranging from 400 to 800 °C. The crystallite size of the AZB nanostructures was found to vary from 28 to 38 nm with the variation in annealing temperature. The band gap of the AZB decreased from 3.29 to 3.27 eV, with increasing annealing temperature from 400 to 700 °C and increased to 3.30 eV at 800 °C probably due to the formation of Zn{sub 2}SiO{sub 4} at the interface. The band gap variation is explained in terms of annealing induced stress in the AZB. The n-AZB/p-Si heterojunction exhibited diode behavior. The best rectifying behavior was exhibited at 700 °C.},
doi = {10.1016/J.MATERRESBULL.2013.07.061},
journal = {Materials Research Bulletin},
number = 11,
volume = 48,
place = {United States},
year = {Fri Nov 15 00:00:00 EST 2013},
month = {Fri Nov 15 00:00:00 EST 2013}
}
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