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Title: Native defects affecting the Li atom distribution tune the optical emission of ZnO:Li epitaxial thin film

Abstract

It is found that the oxygen vacancy (V{sub O}) defect concentration affecting the separation between individual species in Li{sub Zn}-Li{sub i} complex influences the optical emission property of Li{sub 0.06}Zn{sub 0.94}O epitaxial thin film grown by pulsed laser deposition. The film grown under low oxygen partial pressure (n-type conductivity)/higher partial pressure (resistive-type) has broad emission at ∼2.99 eV/∼2.1 eV and a narrower emission at 3.63 eV/3.56 eV, respectively. First principle based mBJLDA electronic structure calculation suggests that the emission at 2.99 eV is due to the Li{sub Zn}-Li{sub i} pair complex and the emission at 2.1 eV is when the component species are away from each other.

Authors:
; ; ;  [1];  [2]
  1. International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560064 (India)
  2. (India)
Publication Date:
OSTI Identifier:
22283223
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; ENERGY BEAM DEPOSITION; EPITAXY; EV RANGE; LASER RADIATION; LITHIUM; OXYGEN; PARTIAL PRESSURE; PHOTON EMISSION; PULSED IRRADIATION; THIN FILMS; VACANCIES; ZINC OXIDES

Citation Formats

Sahu, R., Dileep, K., Loukya, B., Datta, R., E-mail: ranjan@jncasr.ac.in, and Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560064. Native defects affecting the Li atom distribution tune the optical emission of ZnO:Li epitaxial thin film. United States: N. p., 2014. Web. doi:10.1063/1.4864362.
Sahu, R., Dileep, K., Loukya, B., Datta, R., E-mail: ranjan@jncasr.ac.in, & Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560064. Native defects affecting the Li atom distribution tune the optical emission of ZnO:Li epitaxial thin film. United States. doi:10.1063/1.4864362.
Sahu, R., Dileep, K., Loukya, B., Datta, R., E-mail: ranjan@jncasr.ac.in, and Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560064. Mon . "Native defects affecting the Li atom distribution tune the optical emission of ZnO:Li epitaxial thin film". United States. doi:10.1063/1.4864362.
@article{osti_22283223,
title = {Native defects affecting the Li atom distribution tune the optical emission of ZnO:Li epitaxial thin film},
author = {Sahu, R. and Dileep, K. and Loukya, B. and Datta, R., E-mail: ranjan@jncasr.ac.in and Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560064},
abstractNote = {It is found that the oxygen vacancy (V{sub O}) defect concentration affecting the separation between individual species in Li{sub Zn}-Li{sub i} complex influences the optical emission property of Li{sub 0.06}Zn{sub 0.94}O epitaxial thin film grown by pulsed laser deposition. The film grown under low oxygen partial pressure (n-type conductivity)/higher partial pressure (resistive-type) has broad emission at ∼2.99 eV/∼2.1 eV and a narrower emission at 3.63 eV/3.56 eV, respectively. First principle based mBJLDA electronic structure calculation suggests that the emission at 2.99 eV is due to the Li{sub Zn}-Li{sub i} pair complex and the emission at 2.1 eV is when the component species are away from each other.},
doi = {10.1063/1.4864362},
journal = {Applied Physics Letters},
number = 5,
volume = 104,
place = {United States},
year = {Mon Feb 03 00:00:00 EST 2014},
month = {Mon Feb 03 00:00:00 EST 2014}
}
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