Publisher's Note: “The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors” [Appl. Phys. Lett. 104, 033503 (2014)]
- Department of Electrical Engineering, National Central University, Jhongli, Taiwan (China)
No abstract prepared.
- OSTI ID:
- 22283165
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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