Sub-10 nm nano-gap device for single-cluster transport measurements

Journal Article · Mon Feb 17 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4865814· OSTI ID:22283142

Morel, R.; Vila, L.; Brenac, A.; Marty, A.; Notin, L.; Beigné, C. ^[1]

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1. INAC/SP2M - Université Joseph Fourier, CEA Grenoble, 38054 Grenoble (France)

We present a versatile procedure for the fabrication of single electron transistor (SET) devices with nanometer-sized clusters and embedded back gate electrode. The process uses sputtering gas-aggregation for the growth of clusters and e-beam lithography with double angle shadow-edge deposition to obtain electrodes separated by nano-gaps with width below 10 nm. The nano-gap width is easily controlled only by geometrical factors such as deposited thin film thickness and evaporation angles. The usefulness of this technique is demonstrated by measuring the SET behavior of a device with a 4 nm cobalt cluster embedded in alumina, where the Coulomb blockade and incremental cluster charging can be readily identified without resorting to the differential conductivity.

• OSTI ID: 22283142
• Journal Information: Applied Physics Letters, Vol. 104, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM OXIDES
COBALT
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRODES
ELECTRON BEAMS
ELECTRONS
EVAPORATION
FABRICATION
MASKING
NANOSTRUCTURES
PHYSICAL RADIATION EFFECTS
SPUTTERING
THICKNESS
THIN FILMS
TRANSISTORS