p-type doping of MoS{sub 2} thin films using Nb
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
- Department of Chemistry, The Ohio State University, Columbus, Ohio 43210 (United States)
- Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States)
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)
We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited MoS{sub 2}. Niobium was found to act as an efficient acceptor up to relatively high density in MoS{sub 2} films. For a hole density of 3.1 × 10{sup 20} cm{sup −3}, Hall mobility of 8.5 cm{sup 2} V{sup −1} s{sup −1} was determined, which matches well with the theoretically expected values. X-ray diffraction scans and Raman characterization indicated that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. Scanning transmission electron microscope imaging showed ordered crystalline nature of the Nb-doped MoS{sub 2} layers stacked in the [0001] direction. This demonstration of substitutional p-doping in large area epitaxial MoS{sub 2} could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides.
- OSTI ID:
- 22283072
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Epitaxial growth of large area single-crystalline few-layer MoS{sub 2} with high space charge mobility of 192 cm{sup 2} V{sup −1} s{sup −1}
MOCVD Growth and Characterization of ZnSnN2
Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
DOPED MATERIALS
EPITAXY
HALL EFFECT
HOLE MOBILITY
HOLES
LAYERS
MOLYBDENUM SULFIDES
NIOBIUM
P-TYPE CONDUCTORS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION