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Title: Monolayer-induced band shifts at Si(100) and Si(111) surfaces

Abstract

We report our study of the interfacial electronic structure of Si(100) and Si(111) surfaces that have been chemically modified with various organic monolayers, including octadecene and two para-substituted benzene derivatives. X-ray photoelectron spectroscopy reveals an upward band shift, associated with the assembly of these organic monolayers on the Si substrates, that does not correlate with either the dipole moment or the electron withdrawing/donating character of the molecular moieties. This suggests that the nature and quality of the self-assembled monolayer and the intrinsic electronic structure of the semiconductor material define the interfacial electronic structure of the functionalized Si(100) and Si(111) surfaces.

Authors:
; ;  [1]
  1. Naval Research Laboratory, 4555 Overlook Avenue, Washington, DC 20375 (United States)
Publication Date:
OSTI Identifier:
22280570
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BENZENE; CRYSTAL STRUCTURE; DIPOLE MOMENTS; ELECTRONIC STRUCTURE; ELECTRONS; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Mäkinen, A. J., E-mail: Antti.Makinen@nrl.navy.mil, Kim, Chul-Soo, and Kushto, G. P. Monolayer-induced band shifts at Si(100) and Si(111) surfaces. United States: N. p., 2014. Web. doi:10.1063/1.4863419.
Mäkinen, A. J., E-mail: Antti.Makinen@nrl.navy.mil, Kim, Chul-Soo, & Kushto, G. P. Monolayer-induced band shifts at Si(100) and Si(111) surfaces. United States. doi:10.1063/1.4863419.
Mäkinen, A. J., E-mail: Antti.Makinen@nrl.navy.mil, Kim, Chul-Soo, and Kushto, G. P. Mon . "Monolayer-induced band shifts at Si(100) and Si(111) surfaces". United States. doi:10.1063/1.4863419.
@article{osti_22280570,
title = {Monolayer-induced band shifts at Si(100) and Si(111) surfaces},
author = {Mäkinen, A. J., E-mail: Antti.Makinen@nrl.navy.mil and Kim, Chul-Soo and Kushto, G. P.},
abstractNote = {We report our study of the interfacial electronic structure of Si(100) and Si(111) surfaces that have been chemically modified with various organic monolayers, including octadecene and two para-substituted benzene derivatives. X-ray photoelectron spectroscopy reveals an upward band shift, associated with the assembly of these organic monolayers on the Si substrates, that does not correlate with either the dipole moment or the electron withdrawing/donating character of the molecular moieties. This suggests that the nature and quality of the self-assembled monolayer and the intrinsic electronic structure of the semiconductor material define the interfacial electronic structure of the functionalized Si(100) and Si(111) surfaces.},
doi = {10.1063/1.4863419},
journal = {Applied Physics Letters},
number = 4,
volume = 104,
place = {United States},
year = {Mon Jan 27 00:00:00 EST 2014},
month = {Mon Jan 27 00:00:00 EST 2014}
}
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