Control of ferromagnetism by manipulating the carrier wavefunction in ferromagnetic semiconductor (In,Fe)As quantum wells

Journal Article · Mon Jan 27 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4863214· OSTI ID:22280533

Duc Anh, Le; Nam Hai, Pham; Tanaka, Masaaki ^[1]

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1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 113-8656 Tokyo (Japan)

We demonstrated the control of ferromagnetism in a surface quantum well containing a 5 nm-thick n-type ferromagnetic semiconductor (FMS) (In,Fe)As layer sandwiched between two InAs layers, by manipulating the carrier wavefunction. The Curie temperature (T{sub C}) of the (In,Fe)As layer was effectively changed by up to 12 K (ΔT{sub C}/T{sub C} = 55%). Our calculation using the mean-field Zener theory reveals an unexpectedly large s-d exchange interaction in (In,Fe)As. Our results establish an effective way to control the ferromagnetism in quantum heterostructures of n-type FMSs, as well as require reconsideration on the current understanding of the s-d exchange interaction in narrow gap FMSs.

• OSTI ID: 22280533
• Journal Information: Applied Physics Letters, Vol. 104, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
CHARGE CARRIERS
CONTROL
CURIE POINT
EXCHANGE INTERACTIONS
FERROMAGNETISM
INDIUM ARSENIDES
IRON ARSENIDES
LAYERS
MAGNETIC SEMICONDUCTORS
MEAN-FIELD THEORY
N-TYPE CONDUCTORS
QUANTUM WELLS
SURFACES
WAVE FUNCTIONS