Large intrinsic inductance in strongly correlated GaAs two-dimensional holes in the integer quantum hall regime
- Department of Physics and Astronomy, Wayne State University, 666 W. Hancock, Detroit, Michigan 48201 (United States)
- Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States)
Quantum Hall measurements are performed for a two-dimensional hole system (2DHS) confined to a 20 nm quantum well in 〈100〉 GaAs. Quantum oscillations reveal a density of 4 - 5×10{sup 10} cm{sup −2} with mobility μ = 1 × 10{sup 6} cm{sup 2}/V s. For temperatures less than ∼350 mK, anomalous insulating peaks are observed between integer fillings 1-2, 2-3, and 3-4. A large out-of-phase signal appears at these peaks, which indicates a substantial inductance inherent to the charge carriers.
- OSTI ID:
- 22280365
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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