Measurement of the transmission magnetic circular dichroism of Ga{sub 1−x}Mn{sub x}As epilayers using a built-in p-i-n photodiode
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 (China)
By constructing a GaMnAs epilayer/semi-insulating In{sub 0.2}Ga{sub 0.8}As/(001) n{sup +}-GaAs substrate layer structure as a built-in p-i-n photodiode, we developed a scheme for on-chip measurements of transmission magnetic circular dichroism (T-MCD). Both the hysteresis loops in the magnetic field sweeps and the wavelength scans at saturated magnetic fields measured using the new T-MCD scheme, illustrated the same features as those previously measured on the freestanding GaMnAs thin films by conventional T-MCD. Because a large group of epitaxially grown magnetic film/semiconductor heterostructures, such as Fe, NiFe, CoFeAl, and MnGa films on semiconductor substrates, are becoming important new building blocks for semiconductor-based spin field-effect transistor, perpendicular magnetic tunnel junction (p-MTJ) and lateral MTJ devices, the new T-MCD scheme can be applied to tests of their magnetic properties by forming either p-i-n or Schottky photodiodes.
- OSTI ID:
- 22278167
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
EPITAXY
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
HETEROJUNCTIONS
HYSTERESIS
MAGNETIC CIRCULAR DICHROISM
MAGNETIC FIELDS
MAGNETIC PROPERTIES
MANGANESE COMPOUNDS
PHOTODIODES
SEMICONDUCTOR MATERIALS
SUBSTRATES
THIN FILMS
TUNNEL EFFECT
X-RAY SPECTROSCOPY