skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ballistic performance comparison of monolayer transition metal dichalcogenide MX{sub 2} (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors

Abstract

We study the transport properties of monolayer MX{sub 2} (M = Mo, W; X = S, Se, Te) n- and p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hopping potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX{sub 2} MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX{sub 2} MOSFETs.

Authors:
; ;  [1]
  1. Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)
Publication Date:
OSTI Identifier:
22277988
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; DENSITY FUNCTIONAL METHOD; ELECTRIC CONDUCTIVITY; EQUILIBRIUM; GREEN FUNCTION; HAMILTONIANS; MOLYBDENUM SULFIDES; MOSFET; NANOSTRUCTURES; POTENTIALS; TELLURIDES; TUNGSTEN SELENIDES

Citation Formats

Chang, Jiwon, Register, Leonard F., and Banerjee, Sanjay K. Ballistic performance comparison of monolayer transition metal dichalcogenide MX{sub 2} (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors. United States: N. p., 2014. Web. doi:10.1063/1.4866872.
Chang, Jiwon, Register, Leonard F., & Banerjee, Sanjay K. Ballistic performance comparison of monolayer transition metal dichalcogenide MX{sub 2} (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors. United States. https://doi.org/10.1063/1.4866872
Chang, Jiwon, Register, Leonard F., and Banerjee, Sanjay K. 2014. "Ballistic performance comparison of monolayer transition metal dichalcogenide MX{sub 2} (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors". United States. https://doi.org/10.1063/1.4866872.
@article{osti_22277988,
title = {Ballistic performance comparison of monolayer transition metal dichalcogenide MX{sub 2} (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors},
author = {Chang, Jiwon and Register, Leonard F. and Banerjee, Sanjay K.},
abstractNote = {We study the transport properties of monolayer MX{sub 2} (M = Mo, W; X = S, Se, Te) n- and p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hopping potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX{sub 2} MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX{sub 2} MOSFETs.},
doi = {10.1063/1.4866872},
url = {https://www.osti.gov/biblio/22277988}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 8,
volume = 115,
place = {United States},
year = {Fri Feb 28 00:00:00 EST 2014},
month = {Fri Feb 28 00:00:00 EST 2014}
}