Giant dielectric constant in TiO{sub 2}/Al{sub 2}O{sub 3} nanolaminates grown on doped silicon substrate by pulsed laser deposition
- CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)
- IPDIA, 2 rue de la Girafe, 14000 Caen (France)
High quality amorphous nanolaminates by means of alternate Al{sub 2}O{sub 3} and TiO{sub 2} oxide sublayers were grown with atomic scale thickness control by pulsed laser deposition. A giant dielectric constant (>10 000), strongly enhanced compared to the value of either Al{sub 2}O{sub 3} or TiO{sub 2} or their solid solution, was observed. The dependence of the dielectric constant and the dielectric loss on the individual layer thickness of each of the constituting materials was investigated between 0.3 nm and 1 nm, in order to understand the prevailing mechanisms and allow for an optimization of the performances. An impedance study confirmed as the key source of the giant dielectric constant a Maxwell–Wagner type dielectric relaxation, caused by space charge polarization in the nanolaminate structure. The current work provides better insight of nanolaminates and their sublayer thickness engineering for potential applications.
- OSTI ID:
- 22277936
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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