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Title: Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition

Abstract

We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.

Authors:
 [1]; ; ;  [2]; ;  [3];  [1]
  1. Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
  2. Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden)
  3. Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22275811
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; GRAPHENE; MAGNETIC FIELDS

Citation Formats

Nam, Youngwoo, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg, Sun, Jie, Lindvall, Niclas, Yurgens, August, Jae Yang, Seung, Rae Park, Chong, and Woo Park, Yung. Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition. United States: N. p., 2014. Web. doi:10.1063/1.4861745.
Nam, Youngwoo, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg, Sun, Jie, Lindvall, Niclas, Yurgens, August, Jae Yang, Seung, Rae Park, Chong, & Woo Park, Yung. Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition. United States. https://doi.org/10.1063/1.4861745
Nam, Youngwoo, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg, Sun, Jie, Lindvall, Niclas, Yurgens, August, Jae Yang, Seung, Rae Park, Chong, and Woo Park, Yung. Mon . "Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition". United States. https://doi.org/10.1063/1.4861745.
@article{osti_22275811,
title = {Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition},
author = {Nam, Youngwoo and Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg and Sun, Jie and Lindvall, Niclas and Yurgens, August and Jae Yang, Seung and Rae Park, Chong and Woo Park, Yung},
abstractNote = {We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.},
doi = {10.1063/1.4861745},
url = {https://www.osti.gov/biblio/22275811}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 2,
volume = 104,
place = {United States},
year = {2014},
month = {1}
}