Computational study on electrical properties of transition metal dichalcogenide field-effect transistors with strained channel
- Collaborative Research Team Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569 (Japan)
The performance limits of monolayer transition metal dichalcogenide (TMDC) field-effect transistors (FETs) with isotropic biaxial strain were examined with the “top-of-the-barrier” ballistic MOSFET model. Using a first-principle theory, we calculated the band structures and density of states of strained monolayer MoS{sub 2} and WS{sub 2}, and used the results in model calculations. Introducing strain moves the positions of the conduction band minimum and valence band maximum in k-space with resultant variation in the effective mass and population of carriers. Introducing 2% tensile strain into n-type MoS{sub 2} FETs decreases the electron effective mass and, at the same time, increases energy separation between the lower and the higher valleys in the conduction band, resulting in 26% improvement of the ON current up to 1260 A/m. Whereas compressive strain results in complicated effects, −2% strain also improves the ON current by 15%. These results suggest that introducing artificial strain is promising to improve TMDC FET performance.
- OSTI ID:
- 22275787
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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