Current transport and thermoelectric properties of very high power factor Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) devices
Abstract
The current transport and thermoelectric properties of Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) heterostructures with Fe{sub 3}O{sub 4} thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300 K. We observe a sharp drop of the in-plane resistivity at 200 K due to the onset of conduction along the Si/SiO{sub 2} interface related to tunneling of electrons from the Fe{sub 3}O{sub 4} into the accumulation layer of holes at the Si/SiO{sub 2} interface, whose existence was confirmed by capacitance-voltage measurements and a two band analysis of the Hall effect. This is accompanied by a large increase of the Seebeck coefficient reaching +1000 μV/K at 300 K that is related to holes in the p-type Si(001) and gives a power factor of 70 mW/K{sup 2}m when the Fe{sub 3}O{sub 4} layer thickness is reduced down to 150 nm. We show that most of the current flows in the Fe{sub 3}O{sub 4} layer at 300 K, while the Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) heterostructures behave like tunneling p-n junctions in the transverse direction.
- Authors:
-
- Department of Materials Science and Technology, University of Crete, P.O. Box 2208, Heraklion, Crete 710 03 (Greece)
- Department of Physics, University of Lisbon and ICEMS, Campo Grande Ed. C8, Lisbon 1749-016 (Portugal)
- Publication Date:
- OSTI Identifier:
- 22275748
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 115; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; ELECTRIC CURRENTS; ELECTRONS; HALL EFFECT; HETEROJUNCTIONS; HOLES; INTERFACES; IRON OXIDES; LAYERS; P-N JUNCTIONS; POWER FACTOR; SILICON; SILICON OXIDES; THERMOELECTRIC PROPERTIES; TUNNEL EFFECT
Citation Formats
Zervos, M., Athanasopoulos, G., Giapintzakis, J., E-mail: giapintz@ucy.ac.cy, Viskadourakis, Z., Flores, R., and Conde, O. Current transport and thermoelectric properties of very high power factor Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) devices. United States: N. p., 2014.
Web. doi:10.1063/1.4861729.
Zervos, M., Athanasopoulos, G., Giapintzakis, J., E-mail: giapintz@ucy.ac.cy, Viskadourakis, Z., Flores, R., & Conde, O. Current transport and thermoelectric properties of very high power factor Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) devices. United States. https://doi.org/10.1063/1.4861729
Zervos, M., Athanasopoulos, G., Giapintzakis, J., E-mail: giapintz@ucy.ac.cy, Viskadourakis, Z., Flores, R., and Conde, O. 2014.
"Current transport and thermoelectric properties of very high power factor Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) devices". United States. https://doi.org/10.1063/1.4861729.
@article{osti_22275748,
title = {Current transport and thermoelectric properties of very high power factor Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) devices},
author = {Zervos, M. and Athanasopoulos, G. and Giapintzakis, J., E-mail: giapintz@ucy.ac.cy and Viskadourakis, Z. and Flores, R. and Conde, O.},
abstractNote = {The current transport and thermoelectric properties of Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) heterostructures with Fe{sub 3}O{sub 4} thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300 K. We observe a sharp drop of the in-plane resistivity at 200 K due to the onset of conduction along the Si/SiO{sub 2} interface related to tunneling of electrons from the Fe{sub 3}O{sub 4} into the accumulation layer of holes at the Si/SiO{sub 2} interface, whose existence was confirmed by capacitance-voltage measurements and a two band analysis of the Hall effect. This is accompanied by a large increase of the Seebeck coefficient reaching +1000 μV/K at 300 K that is related to holes in the p-type Si(001) and gives a power factor of 70 mW/K{sup 2}m when the Fe{sub 3}O{sub 4} layer thickness is reduced down to 150 nm. We show that most of the current flows in the Fe{sub 3}O{sub 4} layer at 300 K, while the Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) heterostructures behave like tunneling p-n junctions in the transverse direction.},
doi = {10.1063/1.4861729},
url = {https://www.osti.gov/biblio/22275748},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 3,
volume = 115,
place = {United States},
year = {Tue Jan 21 00:00:00 EST 2014},
month = {Tue Jan 21 00:00:00 EST 2014}
}