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Title: The synthesis, single-crystal structure, optical absorption, and resistivity of Th{sub 2}GeSe{sub 5}

Abstract

The compound Th{sub 2}GeSe{sub 5} has been synthesized by the reaction of the elements at 1273 K. From a single-crystal study Th{sub 2}GeSe{sub 5} crystallizes in the Ba{sub 5}Si{sub 3} structure type with four formula units in the space group D{sup 8}{sub 4h}−P4/ncc of the tetragonal system in a cell with dimensions a=7.4968(4) Å and c=13.6302(9) Å at 100(2) K. From optical absorption measurements Th{sub 2}GeSe{sub 5} is found to have an optical band gap of 1.92 eV (indirect) or 1.98 eV (direct), consistent with its red color. Th{sub 2}GeSe{sub 5} is a wide gap semiconductor, as indicated by its electrical resistivity at 298 K of 4.37(2)×10{sup 9} Ω cm measured on a single crystal. - Graphical abstract: The structure of Th{sub 2}GeSe{sub 5}. Display Omitted - Highlights: • The new compound Th{sub 2}GeSe{sub 5} was synthesized from the elements and recrystallized from Sb{sub 2}Se{sub 3}. • Th{sub 2}GeSe{sub 5} crystallizes in the Ba{sub 5}Si{sub 3} structure type. • The band gap of Th{sub 2}GeSe{sub 5} is1.92 eV and its resistivity shows it to be a wide gap semiconductor.

Authors:
; ; ;
Publication Date:
OSTI Identifier:
22274067
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Solid State Chemistry; Journal Volume: 205; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ABSORPTION; MONOCRYSTALS; SEMICONDUCTOR MATERIALS; SPACE GROUPS; SYNTHESIS; THORIUM

Citation Formats

Koscielski, Lukasz A., Malliakas, Christos D., Sarjeant, Amy A., and Ibers, James A., E-mail: ibers@chem.northwestern.edu. The synthesis, single-crystal structure, optical absorption, and resistivity of Th{sub 2}GeSe{sub 5}. United States: N. p., 2013. Web. doi:10.1016/J.JSSC.2013.06.031.
Koscielski, Lukasz A., Malliakas, Christos D., Sarjeant, Amy A., & Ibers, James A., E-mail: ibers@chem.northwestern.edu. The synthesis, single-crystal structure, optical absorption, and resistivity of Th{sub 2}GeSe{sub 5}. United States. doi:10.1016/J.JSSC.2013.06.031.
Koscielski, Lukasz A., Malliakas, Christos D., Sarjeant, Amy A., and Ibers, James A., E-mail: ibers@chem.northwestern.edu. Sun . "The synthesis, single-crystal structure, optical absorption, and resistivity of Th{sub 2}GeSe{sub 5}". United States. doi:10.1016/J.JSSC.2013.06.031.
@article{osti_22274067,
title = {The synthesis, single-crystal structure, optical absorption, and resistivity of Th{sub 2}GeSe{sub 5}},
author = {Koscielski, Lukasz A. and Malliakas, Christos D. and Sarjeant, Amy A. and Ibers, James A., E-mail: ibers@chem.northwestern.edu},
abstractNote = {The compound Th{sub 2}GeSe{sub 5} has been synthesized by the reaction of the elements at 1273 K. From a single-crystal study Th{sub 2}GeSe{sub 5} crystallizes in the Ba{sub 5}Si{sub 3} structure type with four formula units in the space group D{sup 8}{sub 4h}−P4/ncc of the tetragonal system in a cell with dimensions a=7.4968(4) Å and c=13.6302(9) Å at 100(2) K. From optical absorption measurements Th{sub 2}GeSe{sub 5} is found to have an optical band gap of 1.92 eV (indirect) or 1.98 eV (direct), consistent with its red color. Th{sub 2}GeSe{sub 5} is a wide gap semiconductor, as indicated by its electrical resistivity at 298 K of 4.37(2)×10{sup 9} Ω cm measured on a single crystal. - Graphical abstract: The structure of Th{sub 2}GeSe{sub 5}. Display Omitted - Highlights: • The new compound Th{sub 2}GeSe{sub 5} was synthesized from the elements and recrystallized from Sb{sub 2}Se{sub 3}. • Th{sub 2}GeSe{sub 5} crystallizes in the Ba{sub 5}Si{sub 3} structure type. • The band gap of Th{sub 2}GeSe{sub 5} is1.92 eV and its resistivity shows it to be a wide gap semiconductor.},
doi = {10.1016/J.JSSC.2013.06.031},
journal = {Journal of Solid State Chemistry},
number = ,
volume = 205,
place = {United States},
year = {Sun Sep 15 00:00:00 EDT 2013},
month = {Sun Sep 15 00:00:00 EDT 2013}
}