Spin injection and diffusion in silicon based devices from a space charge layer

Ghosh, Joydeep; Sverdlov, Viktor; Windbacher, Thomas; Selberherr, Siegfried

doi:10.1063/1.4856056

Title: Spin injection and diffusion in silicon based devices from a space charge layer

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Abstract

We have performed simulations on electron spin transport in an n-doped silicon bar with spin-dependent conductivity with or without the presence of an external electric field. We further consider three cases like charge neutrality, charge accumulation, and charge depletion at one boundary and found substantial differences in the spin transport behavior. The criteria determining the maximum spin current are investigated. The physical reason behind the transport behavior is explained.

Authors:

Ghosh, Joydeep; Sverdlov, Viktor; Windbacher, Thomas; Selberherr, Siegfried ^[1]

Institute for Microelectronics, TU Wien, Gußhausstraße 27–29/E360, A–1040 Wien (Austria)

Publication Date:: Wed May 07 00:00:00 EDT 2014

OSTI Identifier:: 22273928

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 115; Journal Issue: 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPUTERIZED SIMULATION; DEPLETION LAYER; DIFFUSION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRONS; N-TYPE CONDUCTORS; SILICON; SPIN

Citation Formats


                    Ghosh, Joydeep, Sverdlov, Viktor, Windbacher, Thomas, and Selberherr, Siegfried. Spin injection and diffusion in silicon based devices from a space charge layer.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4856056.

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                    Ghosh, Joydeep, Sverdlov, Viktor, Windbacher, Thomas, & Selberherr, Siegfried. Spin injection and diffusion in silicon based devices from a space charge layer.  United States.  https://doi.org/10.1063/1.4856056

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                    Ghosh, Joydeep, Sverdlov, Viktor, Windbacher, Thomas, and Selberherr, Siegfried. 2014.  
        "Spin injection and diffusion in silicon based devices from a space charge layer".  United States.  https://doi.org/10.1063/1.4856056.

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@article{osti_22273928,

  title        = {Spin injection and diffusion in silicon based devices from a space charge layer},

  author       = {Ghosh, Joydeep and Sverdlov, Viktor and Windbacher, Thomas and Selberherr, Siegfried},

  abstractNote = {We have performed simulations on electron spin transport in an n-doped silicon bar with spin-dependent conductivity with or without the presence of an external electric field. We further consider three cases like charge neutrality, charge accumulation, and charge depletion at one boundary and found substantial differences in the spin transport behavior. The criteria determining the maximum spin current are investigated. The physical reason behind the transport behavior is explained.},

  doi          = {10.1063/1.4856056},

  url          = {https://www.osti.gov/biblio/22273928},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 17,

  volume       = 115,

  place        = {United States},

  year         = {Wed May 07 00:00:00 EDT 2014},

  month        = {Wed May 07 00:00:00 EDT 2014}

}

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