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Title: Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

Abstract

We report on the generation and characterization of a hump in the transfer characteristics of amorphous indium gallium zinc-oxide thin-film transistors by positive bias temperature stress. The hump depends strongly on the gate bias stress at 100 °C. Due to the hump, the positive shift of the transfer characteristic in deep depletion is always smaller that in accumulation. Since, the latter shift is twice the former, with very good correlation, we conclude that the effect is due to creation of a double acceptor, likely to be a cation vacancy. Our results indicate that these defects are located near the gate insulator/active layer interface, rather than in the bulk. Migration of donor defects from the interface towards the bulk may also occur under PBST at 100 °C.

Authors:
; ;  [1];  [1];  [2]
  1. Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)
  2. (United Kingdom)
Publication Date:
OSTI Identifier:
22273693
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; CATIONS; CORRELATIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INTERFACES; SEMICONDUCTOR MATERIALS; STRESSES; THIN FILMS; TRANSISTORS; VACANCIES; ZINC OXIDES

Citation Formats

Um, Jae Gwang, Mativenga, Mallory, Jang, Jin, E-mail: jjang@khu.ac.kr, Migliorato, Piero, and Electrical Engineering Division, Department of Engineering, Cambridge University, Cambridge CB3 0FA. Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature. United States: N. p., 2014. Web. doi:10.1063/1.4870458.
Um, Jae Gwang, Mativenga, Mallory, Jang, Jin, E-mail: jjang@khu.ac.kr, Migliorato, Piero, & Electrical Engineering Division, Department of Engineering, Cambridge University, Cambridge CB3 0FA. Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature. United States. doi:10.1063/1.4870458.
Um, Jae Gwang, Mativenga, Mallory, Jang, Jin, E-mail: jjang@khu.ac.kr, Migliorato, Piero, and Electrical Engineering Division, Department of Engineering, Cambridge University, Cambridge CB3 0FA. Mon . "Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature". United States. doi:10.1063/1.4870458.
@article{osti_22273693,
title = {Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature},
author = {Um, Jae Gwang and Mativenga, Mallory and Jang, Jin, E-mail: jjang@khu.ac.kr and Migliorato, Piero and Electrical Engineering Division, Department of Engineering, Cambridge University, Cambridge CB3 0FA},
abstractNote = {We report on the generation and characterization of a hump in the transfer characteristics of amorphous indium gallium zinc-oxide thin-film transistors by positive bias temperature stress. The hump depends strongly on the gate bias stress at 100 °C. Due to the hump, the positive shift of the transfer characteristic in deep depletion is always smaller that in accumulation. Since, the latter shift is twice the former, with very good correlation, we conclude that the effect is due to creation of a double acceptor, likely to be a cation vacancy. Our results indicate that these defects are located near the gate insulator/active layer interface, rather than in the bulk. Migration of donor defects from the interface towards the bulk may also occur under PBST at 100 °C.},
doi = {10.1063/1.4870458},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 13,
volume = 115,
place = {United States},
year = {2014},
month = {4}
}