Ellipsometry characterization of polycrystalline ZnO layers with the modeling of carrier concentration gradient: Effects of grain boundary, humidity, and surface texture

Journal Article · Mon Apr 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4870443· OSTI ID:22273681

Sago, Keisuke; Fujiwara, Hiroyuki ^[1]; Kuramochi, Hideto; Iigusa, Hitoshi; Utsumi, Kentaro ^[2]

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1. Center of Innovative Photovoltaic Systems (CIPS), Gifu University, 1-1 Yanagido, Gifu 501-1193 (Japan)
2. Tokyo Research Laboratory, TOSOH Co., Ltd., 2743-1 Hayakawa, Ayase-shi, Kanagawa 252-1123 (Japan)

Spectroscopic ellipsometry (SE) has been applied to study the effects of grain boundary, humidity, and surface texture on the carrier transport properties of Al-doped ZnO layers fabricated by dc and rf magnetron sputtering. In the SE analysis, the variation in the free carrier absorption toward the growth direction, induced by the ZnO grain growth on foreign substrates, has been modeled explicitly by adopting a multilayer model in which the optical carrier concentration (N{sub opt}) varies continuously with a constant optical mobility (μ{sub opt}). The effect of the grain boundary has been studied by comparing μ{sub opt} with Hall mobility (μ{sub Hall}). The change in μ{sub Hall}/μ{sub opt} indicates a sharp structural transition of the ZnO polycrystalline layer at a thickness of d ∼ 500 nm, which correlates very well with the structure confirmed by transmission electron microscopy. In particular, below the transition thickness, the formation of the high density grain boundary leads to the reduction in the μ{sub Hall}/μ{sub opt} ratio as well as N{sub opt}. As a result, we find that the thickness dependence of the carrier transport properties is almost completely governed by the grain boundary formation. On the other hand, when the ZnO layer is exposed to wet air at 85 °C, μ{sub Hall} reduces drastically with a minor variation of μ{sub opt} due to the enhanced grain boundary scattering. We have also characterized textured ZnO:Al layers prepared by HCl wet etching by SE. The analysis revealed that the near-surface carrier concentration increases slightly after the etching. We demonstrate that the SE technique can be applied to distinguish various rough textured structures (size ∼ 1 μm) of the ZnO layers prepared by the HCl etching.

• OSTI ID: 22273681
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER MOBILITY
COMPARATIVE EVALUATIONS
COMPUTERIZED SIMULATION
CONCENTRATION RATIO
DOPED MATERIALS
ELLIPSOMETRY
ETCHING
GRAIN BOUNDARIES
GRAIN DENSITY
GRAIN GROWTH
HUMIDITY
HYDROCHLORIC ACID
LAYERS
POLYCRYSTALS
TEXTURE
TRANSMISSION ELECTRON MICROSCOPY
ZINC OXIDES