A theoretical analysis of the optical absorption properties in one-dimensional InAs/GaAs quantum dot superlattices

Journal Article · Mon Apr 14 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4869396· OSTI ID:22273629

Kotani, Teruhisa ^[1]; Birner, Stefan ^[2]; Lugli, Paolo ^[2]; Hamaguchi, Chihiro ^[1]

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1. Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567 (Japan)
2. Institute for Nanoelectronics, Technische Universität München, Arcisstr. 21, 80333 Munich (Germany)

We present theoretical investigations of miniband structures and optical properties of InAs/GaAs one-dimensional quantum dot superlattices (1D-QDSLs). The calculation is based on the multi-band k·p theory, including the conduction and valence band mixing effects, the strain effect, and the piezoelectric effect; all three effects have periodic boundary conditions. We find that both the electronic and optical properties of the 1D-QDSLs show unique states which are different from those of well known single quantum dots (QDs) or quantum wires. We predict that the optical absorption spectra of the 1D-QDSLs strongly depend on the inter-dot spacing because of the inter-dot carrier coupling and changing strain states, which strongly influence the conduction and valence band potentials. The inter-miniband transitions form the absorption bands. Those absorption bands can be tuned from almost continuous (closely stacked QD case) to spike-like shape (almost isolated QD case) by changing the inter-dot spacing. The polarization of the lowest absorption peak for the 1D-QDSLs changes from being parallel to the stacking direction to being perpendicular to the stacking direction as the inter-dot spacing increases. In the case of closely stacked QDs, in-plane anisotropy, especially [110] and [11{sup ¯}0] directions also depend on the inter-dot spacing. Our findings and predictions will provide an additional degree of freedom for the design of QD-based optoelectronic devices.

• OSTI ID: 22273629
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION SPECTRA
BOUNDARY CONDITIONS
DEGREES OF FREEDOM
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
OPTICAL PROPERTIES
PERIODICITY
PIEZOELECTRICITY
POLARIZATION
POTENTIALS
QUANTUM DOTS
QUANTUM WIRES
STRAINS
SUPERLATTICES
VALENCE