Response to “Comment on ‘A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs-GaSb type-II superlattices’” [J. Appl. Phys. 115, 146101 (2014)]
Journal Article
·
· Journal of Applied Physics
- Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz, 51666-14766 (Iran, Islamic Republic of)
- School of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley WA 6009 (Australia)
No abstract prepared.
- OSTI ID:
- 22273613
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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