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Title: Dielectric relaxations and alternating current conductivity in manganese substituted cobalt ferrite

Abstract

Manganese (Mn) substituted cobalt ferrites (CoFe{sub 2-x}Mn{sub x}O{sub 4}, referred to CFMO) have been synthesized by the solid state reaction method and their dielectric properties and ac conductivity have been evaluated as a function of applied frequency and temperature. X-ray diffraction measurements indicate that CFMO crystallize in the inverse cubic spinel phase with a lattice constant ∼8.38 Å. Frequency dependent dielectric measurements at room temperature obey the modified Debye model with relaxation time of 10{sup −4} s and spreading factor of 0.35(±0.05). The frequency (20 Hz–1 MHz) and temperature (T = 300–900 K) dependent dielectric constant analyses indicate that CFMO exhibit two dielectric relaxations at lower frequencies (1–10 kHz), while completely single dielectric relaxation for higher frequencies (100 kHz–1 MHz). The dielectric constant of CFMO is T-independent up to ∼400 K, at which point increasing trend prevails. The dielectric constant increase with T > 400 K is explained through impedance spectroscopy assuming a two-layer model, where low-resistive grains separated from each other by high-resistive grain boundaries. Following this model, the two electrical responses in impedance formalism are attributed to the grain and grain-boundary effects, respectively, which also satisfactorily accounts for the two dielectric relaxations. The capacitance of the bulk of the grain determined from impedance analyses is ∼10 pF, which remains constant with T,more » while the grain-boundary capacitance increases up to ∼3.5 nF with increasing T. The tan δ (loss tangent)-T also reveals the typical behavior of relaxation losses in CFMO.« less

Authors:
;
Publication Date:
OSTI Identifier:
22273608
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; ALTERNATING CURRENT; CAPACITANCE; COBALT COMPOUNDS; DIELECTRIC MATERIALS; FERRITES; FREQUENCY DEPENDENCE; GRAIN BOUNDARIES; LATTICE PARAMETERS; LAYERS; MANGANESE COMPOUNDS; PERMITTIVITY; RELAXATION LOSSES; RELAXATION TIME; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; X-RAY DIFFRACTION

Citation Formats

Kolekar, Y. D., Sanchez, L. J., and Ramana, C. V., E-mail: rvchintalapalle@utep.edu. Dielectric relaxations and alternating current conductivity in manganese substituted cobalt ferrite. United States: N. p., 2014. Web. doi:10.1063/1.4870232.
Kolekar, Y. D., Sanchez, L. J., & Ramana, C. V., E-mail: rvchintalapalle@utep.edu. Dielectric relaxations and alternating current conductivity in manganese substituted cobalt ferrite. United States. https://doi.org/10.1063/1.4870232
Kolekar, Y. D., Sanchez, L. J., and Ramana, C. V., E-mail: rvchintalapalle@utep.edu. 2014. "Dielectric relaxations and alternating current conductivity in manganese substituted cobalt ferrite". United States. https://doi.org/10.1063/1.4870232.
@article{osti_22273608,
title = {Dielectric relaxations and alternating current conductivity in manganese substituted cobalt ferrite},
author = {Kolekar, Y. D. and Sanchez, L. J. and Ramana, C. V., E-mail: rvchintalapalle@utep.edu},
abstractNote = {Manganese (Mn) substituted cobalt ferrites (CoFe{sub 2-x}Mn{sub x}O{sub 4}, referred to CFMO) have been synthesized by the solid state reaction method and their dielectric properties and ac conductivity have been evaluated as a function of applied frequency and temperature. X-ray diffraction measurements indicate that CFMO crystallize in the inverse cubic spinel phase with a lattice constant ∼8.38 Å. Frequency dependent dielectric measurements at room temperature obey the modified Debye model with relaxation time of 10{sup −4} s and spreading factor of 0.35(±0.05). The frequency (20 Hz–1 MHz) and temperature (T = 300–900 K) dependent dielectric constant analyses indicate that CFMO exhibit two dielectric relaxations at lower frequencies (1–10 kHz), while completely single dielectric relaxation for higher frequencies (100 kHz–1 MHz). The dielectric constant of CFMO is T-independent up to ∼400 K, at which point increasing trend prevails. The dielectric constant increase with T > 400 K is explained through impedance spectroscopy assuming a two-layer model, where low-resistive grains separated from each other by high-resistive grain boundaries. Following this model, the two electrical responses in impedance formalism are attributed to the grain and grain-boundary effects, respectively, which also satisfactorily accounts for the two dielectric relaxations. The capacitance of the bulk of the grain determined from impedance analyses is ∼10 pF, which remains constant with T, while the grain-boundary capacitance increases up to ∼3.5 nF with increasing T. The tan δ (loss tangent)-T also reveals the typical behavior of relaxation losses in CFMO.},
doi = {10.1063/1.4870232},
url = {https://www.osti.gov/biblio/22273608}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 14,
volume = 115,
place = {United States},
year = {Mon Apr 14 00:00:00 EDT 2014},
month = {Mon Apr 14 00:00:00 EDT 2014}
}