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Title: Reconfigurable and non-volatile vertical magnetic logic gates

Abstract

In this paper, we discuss the concept and prototype fabrication of reconfigurable and non-volatile vertical magnetic logic gates. These gates consist of two input layers and a RESET layer. The RESET layer allows the structure to be used as either an AND or an OR gate, depending on its magnetization state. To prove this concept, the gates were fabricated using a multi-layered patterned magnetic media, in which three magnetic layers are stacked and exchange-decoupled via non-magnetic interlayers. We demonstrate the functionality of these logic gates by conducting atomic force microscopy and magnetic force microscopy (MFM) analysis of the multi-layered patterned magnetic media. The logic gates operation mechanism and fabrication feasibility are both validated by the MFM imaging results.

Authors:
;  [1]; ;  [2];  [3];  [4];  [1];  [5];  [1];  [5]
  1. Electrical Engineering Department, University of California, Riverside, California 92504 (United States)
  2. Materials Science and Engineering Program, University of California, Riverside, California 92504 (United States)
  3. Computer Science and Engineering, University of California, Riverside, California 92504 (United States)
  4. Electrical and Computer Engineering, University of California, Berkeley, California 94720 (United States)
  5. (United States)
Publication Date:
OSTI Identifier:
22273523
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; FABRICATION; LAYERS; LOGIC CIRCUITS; MAGNETIC FIELDS; MAGNETIC MATERIALS; MAGNETIZATION

Citation Formats

Butler, J., E-mail: jbutl001@ucr.edu, Lee, B., Shachar, M., Garcia, D., Hu, B., Hong, J., Amos, N., Materials Science and Engineering Program, University of California, Riverside, California 92504, Khizroev, S., and Electrical and Computer Engineering, Florida International University, Miami, Florida 33174. Reconfigurable and non-volatile vertical magnetic logic gates. United States: N. p., 2014. Web. doi:10.1063/1.4873297.
Butler, J., E-mail: jbutl001@ucr.edu, Lee, B., Shachar, M., Garcia, D., Hu, B., Hong, J., Amos, N., Materials Science and Engineering Program, University of California, Riverside, California 92504, Khizroev, S., & Electrical and Computer Engineering, Florida International University, Miami, Florida 33174. Reconfigurable and non-volatile vertical magnetic logic gates. United States. doi:10.1063/1.4873297.
Butler, J., E-mail: jbutl001@ucr.edu, Lee, B., Shachar, M., Garcia, D., Hu, B., Hong, J., Amos, N., Materials Science and Engineering Program, University of California, Riverside, California 92504, Khizroev, S., and Electrical and Computer Engineering, Florida International University, Miami, Florida 33174. Mon . "Reconfigurable and non-volatile vertical magnetic logic gates". United States. doi:10.1063/1.4873297.
@article{osti_22273523,
title = {Reconfigurable and non-volatile vertical magnetic logic gates},
author = {Butler, J., E-mail: jbutl001@ucr.edu and Lee, B. and Shachar, M. and Garcia, D. and Hu, B. and Hong, J. and Amos, N. and Materials Science and Engineering Program, University of California, Riverside, California 92504 and Khizroev, S. and Electrical and Computer Engineering, Florida International University, Miami, Florida 33174},
abstractNote = {In this paper, we discuss the concept and prototype fabrication of reconfigurable and non-volatile vertical magnetic logic gates. These gates consist of two input layers and a RESET layer. The RESET layer allows the structure to be used as either an AND or an OR gate, depending on its magnetization state. To prove this concept, the gates were fabricated using a multi-layered patterned magnetic media, in which three magnetic layers are stacked and exchange-decoupled via non-magnetic interlayers. We demonstrate the functionality of these logic gates by conducting atomic force microscopy and magnetic force microscopy (MFM) analysis of the multi-layered patterned magnetic media. The logic gates operation mechanism and fabrication feasibility are both validated by the MFM imaging results.},
doi = {10.1063/1.4873297},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 16,
volume = 115,
place = {United States},
year = {2014},
month = {4}
}