The effect of Bi composition on the properties of InP{sub 1−x}Bi{sub x} grown by liquid phase epitaxy

Journal Article · Wed May 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4873640· OSTI ID:22273447

Das, T. D., E-mail: [e-mail] ^[1]

---

1. Department of Electronic Science, University of Calcutta, 92, A. P. C. Road, Kolkata 700009 (India)

InP{sub 1−x}Bi{sub x} epilayers (x ≥ 1.2%) on InP (001) are grown reproducibly by liquid phase epitaxy with conventional solution baking in a H{sub 2} environment. The Bi composition and surface morphology of the grown layers are studied by secondary ion mass spectroscopy and atomic force microscopy, respectively. High-resolution x-ray diffraction is used to characterize the lattice parameters and the crystalline quality of the layers. 10 K photoluminescence measurements indicate three clearly resolved peaks in undoped InP layers with band-to-band transition at 1.42 eV which is redshifted with Bi incorporation in the layer with a maximum band gap reduction of 50 meV/% Bi. The effect is attributed to the interaction between the valence band edge and Bi-related defect states as is explained here by valence-band anticrossing model. Room temperature Hall measurements indicate that the mobility of the layer is not significantly affected for Bi concentration up to 1.2%.

• OSTI ID: 22273447
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
BISMUTH COMPOUNDS
CARRIER MOBILITY
CONCENTRATION RATIO
HALL EFFECT
INDIUM PHOSPHIDES
ION MICROPROBE ANALYSIS
LATTICE PARAMETERS
LAYERS
LIQUID PHASE EPITAXY
MASS SPECTROSCOPY
MORPHOLOGY
PHOTOLUMINESCENCE
RED SHIFT
TEMPERATURE RANGE 0273-0400 K
X-RAY DIFFRACTION