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Title: The effect of Bi composition on the properties of InP{sub 1−x}Bi{sub x} grown by liquid phase epitaxy

Abstract

InP{sub 1−x}Bi{sub x} epilayers (x ≥ 1.2%) on InP (001) are grown reproducibly by liquid phase epitaxy with conventional solution baking in a H{sub 2} environment. The Bi composition and surface morphology of the grown layers are studied by secondary ion mass spectroscopy and atomic force microscopy, respectively. High-resolution x-ray diffraction is used to characterize the lattice parameters and the crystalline quality of the layers. 10 K photoluminescence measurements indicate three clearly resolved peaks in undoped InP layers with band-to-band transition at 1.42 eV which is redshifted with Bi incorporation in the layer with a maximum band gap reduction of 50 meV/% Bi. The effect is attributed to the interaction between the valence band edge and Bi-related defect states as is explained here by valence-band anticrossing model. Room temperature Hall measurements indicate that the mobility of the layer is not significantly affected for Bi concentration up to 1.2%.

Authors:
 [1]
  1. Department of Electronic Science, University of Calcutta, 92, A. P. C. Road, Kolkata 700009 (India)
Publication Date:
OSTI Identifier:
22273447
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; BISMUTH COMPOUNDS; CARRIER MOBILITY; CONCENTRATION RATIO; HALL EFFECT; INDIUM PHOSPHIDES; ION MICROPROBE ANALYSIS; LATTICE PARAMETERS; LAYERS; LIQUID PHASE EPITAXY; MASS SPECTROSCOPY; MORPHOLOGY; PHOTOLUMINESCENCE; RED SHIFT; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION

Citation Formats

Das, T. D., E-mail: tddas@hotmail.com. The effect of Bi composition on the properties of InP{sub 1−x}Bi{sub x} grown by liquid phase epitaxy. United States: N. p., 2014. Web. doi:10.1063/1.4873640.
Das, T. D., E-mail: tddas@hotmail.com. The effect of Bi composition on the properties of InP{sub 1−x}Bi{sub x} grown by liquid phase epitaxy. United States. doi:10.1063/1.4873640.
Das, T. D., E-mail: tddas@hotmail.com. Wed . "The effect of Bi composition on the properties of InP{sub 1−x}Bi{sub x} grown by liquid phase epitaxy". United States. doi:10.1063/1.4873640.
@article{osti_22273447,
title = {The effect of Bi composition on the properties of InP{sub 1−x}Bi{sub x} grown by liquid phase epitaxy},
author = {Das, T. D., E-mail: tddas@hotmail.com},
abstractNote = {InP{sub 1−x}Bi{sub x} epilayers (x ≥ 1.2%) on InP (001) are grown reproducibly by liquid phase epitaxy with conventional solution baking in a H{sub 2} environment. The Bi composition and surface morphology of the grown layers are studied by secondary ion mass spectroscopy and atomic force microscopy, respectively. High-resolution x-ray diffraction is used to characterize the lattice parameters and the crystalline quality of the layers. 10 K photoluminescence measurements indicate three clearly resolved peaks in undoped InP layers with band-to-band transition at 1.42 eV which is redshifted with Bi incorporation in the layer with a maximum band gap reduction of 50 meV/% Bi. The effect is attributed to the interaction between the valence band edge and Bi-related defect states as is explained here by valence-band anticrossing model. Room temperature Hall measurements indicate that the mobility of the layer is not significantly affected for Bi concentration up to 1.2%.},
doi = {10.1063/1.4873640},
journal = {Journal of Applied Physics},
number = 17,
volume = 115,
place = {United States},
year = {Wed May 07 00:00:00 EDT 2014},
month = {Wed May 07 00:00:00 EDT 2014}
}
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