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Title: Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes

Abstract

The gain and photoresponse characteristics have been numerically studied for back-illuminated separate absorption and multiplication (SAM) GaN avalanche photodiodes (APDs). The parameters of fundamental models are calibrated by simultaneously comparing the simulated dark and light current characteristics with the experimental results. Effects of environmental temperatures and device dimensions on gain characteristics have been investigated, and a method to achieve the optimum thickness of charge layer is obtained. The dependence of gain characteristics and breakdown voltage on the doping concentration of the charge layer is also studied in detail to get the optimal charge layer. The bias-dependent spectral responsivity and quantum efficiency are then presented to study the photoresponse mechanisms inside SAM GaN APDs. It is found the responsivity peak red-shifts at first due to the Franz-Keldysh effect and then blue-shifts due to the reach-through effect of the absorption layer. Finally, a new SAM GaN/AlGaN heterojunction APD structure is proposed for optimizing SAM GaN APDs.

Authors:
; ; ;  [1]; ; ; ; ;  [2]
  1. No. 50 Research Institute of China Electronics Technology Group Corporation, 200331 Shanghai (China)
  2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai (China)
Publication Date:
OSTI Identifier:
22271259
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; AMBIENT TEMPERATURE; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GAIN; GALLIUM NITRIDES; HETEROJUNCTIONS; LAYERS; PHOTODIODES; QUANTUM EFFICIENCY; SIMULATION; TEMPERATURE DEPENDENCE

Citation Formats

Wang, Xiaodong, Pan, Ming, Hou, Liwei, Xie, Wei, Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn, Xu, Jintong, Li, Xiangyang, Chen, Xiaoshuang, E-mail: xschen@mail.sitp.ac.cn, and Lu, Wei. Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes. United States: N. p., 2014. Web. doi:10.1063/1.4861148.
Wang, Xiaodong, Pan, Ming, Hou, Liwei, Xie, Wei, Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn, Xu, Jintong, Li, Xiangyang, Chen, Xiaoshuang, E-mail: xschen@mail.sitp.ac.cn, & Lu, Wei. Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes. United States. doi:10.1063/1.4861148.
Wang, Xiaodong, Pan, Ming, Hou, Liwei, Xie, Wei, Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn, Xu, Jintong, Li, Xiangyang, Chen, Xiaoshuang, E-mail: xschen@mail.sitp.ac.cn, and Lu, Wei. Tue . "Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes". United States. doi:10.1063/1.4861148.
@article{osti_22271259,
title = {Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes},
author = {Wang, Xiaodong and Pan, Ming and Hou, Liwei and Xie, Wei and Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn and Xu, Jintong and Li, Xiangyang and Chen, Xiaoshuang, E-mail: xschen@mail.sitp.ac.cn and Lu, Wei},
abstractNote = {The gain and photoresponse characteristics have been numerically studied for back-illuminated separate absorption and multiplication (SAM) GaN avalanche photodiodes (APDs). The parameters of fundamental models are calibrated by simultaneously comparing the simulated dark and light current characteristics with the experimental results. Effects of environmental temperatures and device dimensions on gain characteristics have been investigated, and a method to achieve the optimum thickness of charge layer is obtained. The dependence of gain characteristics and breakdown voltage on the doping concentration of the charge layer is also studied in detail to get the optimal charge layer. The bias-dependent spectral responsivity and quantum efficiency are then presented to study the photoresponse mechanisms inside SAM GaN APDs. It is found the responsivity peak red-shifts at first due to the Franz-Keldysh effect and then blue-shifts due to the reach-through effect of the absorption layer. Finally, a new SAM GaN/AlGaN heterojunction APD structure is proposed for optimizing SAM GaN APDs.},
doi = {10.1063/1.4861148},
journal = {Journal of Applied Physics},
number = 1,
volume = 115,
place = {United States},
year = {Tue Jan 07 00:00:00 EST 2014},
month = {Tue Jan 07 00:00:00 EST 2014}
}
  • We report on the spatial uniformity of the gain M of InP/ InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions (SAGM-APD's). Typically, these APD's exhibit less than 10 percent variation in the gain (for M less than or equal to 10) over the entire photosensitive area. The small nonuniformity which is observed shows a one-to-one correspondence with inhomogeneities in the epitaxial layers of the SAGM-APD structure. We also observe a reduction in the effective photosensitive diameter with increasing bias voltage.
  • We have measured the frequency response of InP/ InGaAsP/InGaAs photodiodes with separate absorption, ''grading,'' and multiplication regions (SAGM-APD's) for a wide range (2 less than or equal to M/sub 0/ less than or equal to 35) of dc gains. The results are explained in terms of a theoretical model which incorporates the transit time of carriers through the depletion region, the RC time constant, the accumulation of holes at the valence band discontinuity of the heterojunction interfaces, and the gainbandwidth limit.
  • Abstract not provided.
  • We report that homojunction Al{sub x}Ga{sub 1{minus}x}As avalanche photodiodes (APDs) exhibit very low multiplication noise when the Al content is {ge}80%. It was also found that, due to nonlocal effects, the multiplication noise decreased as the ionization region thickness was reduced from 0.8 {mu}m to {le}0.2 {mu}m for Al ratios (from 0 to 0.9). The excess noise factor of the thin (140 nm) Al{sub 0.9}Ga{sub 0.1}As APDs is the lowest reported to date for III{endash}V compounds and is comparable to that of Si avalanche photodiodes. {copyright} 2001 American Institute of Physics.
  • Optical fiber communications systems are being used for a number of applications, some of which might involve exposure to nuclear radiation. Hence, it is necessary to study the effects of various types of radiation on the components that could make up a fiber optic link. In this paper the authors report on an experimental study of the effects of fission neutron irradiation on a silicon avalanche photodiode, which is a photodetector that is often used as the front end of a receiver in a fiber optic link. Measurements indicate that there is a degradation in the current gain and amore » decrease in the multiplication noise after irradiation. The device, however, continues to behave linearly after irradiation.« less